Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 978-982

  Hoke, W E ^a   Torabi, A ^a   Mosca, J J ^a   Kennedy, T D ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; NUCLEATION; SILICON; THERMODYNAMIC PROPERTIES; THIN FILMS;

NITRIDE FILMS; SILICON MIGRATION; SURFACE METAL; TERNARY GROWTH;

POSITIVE IONS;

EID: 34249898041     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2716003     Document Type: Article

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