Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition

Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

  France, Ryan ^c   Xu, Tao ^c   Chen, Papo ^c   Chandrasekaran, R ^c   Moustakas, T D ^a,b  

^a Boston University   (United States)

^b BOSTON UNIVERSITY   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; CONTACT RESISTIVITY; NITRIDE FILMS; VANADIUM NITRIDE;

CHEMICAL ANALYSIS; ELECTRIC CONDUCTIVITY; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; VANADIUM ALLOYS;

OHMIC CONTACTS;

EID: 33846995075     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2458399     Document Type: Article

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