Enhanced room-temperature luminescence efficiency through carrier localization in Alx Ga1-x N alloys

Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

  Collins, C J ^a   Sampath, A V ^a   Garrett, G A ^a   Sarney, W L ^a   Shen, H ^a   Wraback, M ^a   Nikiforov, A Yu ^b   Cargill III, G S ^b   Dierolf, V ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Lehigh University   (United States)

^c LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; MATRIX ALGEBRA; MOLECULAR BEAM EPITAXY; SEGREGATION (METALLOGRAPHY); SPECTROMETERS; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

BAND EDGE; CATHODOLUMINSCENCE; LUMINSCENCE EFFICIENCY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

PHOTOLUMINESCENCE;

EID: 17044382562     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1856702     Document Type: Article

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