Efficient p -type doping of GaN films by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 85, Issue 21, 2004, Pages 4956-4958

  Bhattacharyya, A ^a,b   Li, W ^a,b   Cabalu, J ^a,b   Moustakas, T D ^a,b   Smith, David J ^b   Hervig, R L ^b  

^a Boston University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIQUID-PHASE PROCESSES; P-TYPE DOPING; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

DISSOLUTION; ELECTRIC RESISTANCE; FILM GROWTH; HIGH TEMPERATURE EFFECTS; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE;

EID: 19144368536     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1826223     Document Type: Article

References (17)

1. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys., Part 2, 0021-4922 31, L139 (1992).
2. S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., Part 1, 31, 1258 (1992).
3. T. D. Moustakas and R. J. Molnar, Mater. Res. Soc. Symp. Proc. 281, 753 (1993).
4. M. S. Brandt, N. M. Johnson, R. J. Molnar, R. Singh, and T. D. Moustakas, Appl. Phys. Lett. 64, 2264 (1994).
5. W. Kim, A Salvador, A. E. Botchkarev, O. Aktas, S. N. Mohammad, and H. Morkoc, Appl. Phys. Lett. 69, 559 (1996).
6. H. M. Ng, D. Doppalapudi, D. Korakakis, R. Singh, and T. D. Moustakas, J. Cryst. Growth 189190, 349 (1998).
7. V. Ramachandran, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, and D. W. Greve, Appl. Phys. Lett. 75, 808 (1999).
8. D. S. Green, E. Haus, F. Wu, L. Chen, U. K. Mishra, and J. S. Speck, J. Vac. Sci. Technol. B 21, 1804 (2003).
9. S. Guha, N. A. Bojarczuk, and F. Cardone, Appl. Phys. Lett. 71, 1685 (1997).
10. C. Bungaro, K. Rapcewicz, and J. Bernholc, Phys. Rev. B 59, 9771 (1999).
11. T. S. Cheng, C. T. Foxxon, N. J. Jeffs, D. J. Dewsnip, L. Flannery, J. W. Orton, S. V. Novikov, B. YaBer, and Yu A. Kudriavtsev, MRS Internet J. Nitride Semicond. Res. 2, 13 (1997).
12. S. Fischer, C. Wetzel, E. E. Haller, and B. K. Meyer, Appl. Phys. Lett. 67, 1298 (1995).
13. A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, S. Skowronski, J. Neugebauer, and J. E. Northrup, Appl. Phys. Lett. 72, 2114 (1998).
14. T. D. Moustakas, E. Iliopoulos, A. V. Sampath, H. M. Ng, D. Doppalpudi, M. Misra, D. Korakakis, and R. Singh, J. Cryst. Growth 227228, 13 (2001).
15. L. T. Romano, J. E. Northrup, A. J. Ptak, and T. H. Myers, Appl. Phys. Lett. 77, 2479 (2000).
16. R. E. Honig, RCA Rev. XVIII, 195 (1957).
17. J. Neugebauer, T. K. Zywietz, M. Scheffler, J. E. Northrup, H. Chen, and R. M. Feenstra, Phys. Rev. Lett. 90, 056101 (2003).