Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 1-2, 2010, Pages 49-51

  Liao, Yitao ^a   Thomidis, Christos ^a   Kao, Chen kai ^a   Moldawer, Adam ^a   Zhang, Wei ^a   Chang, Yi chung ^a   Nikiforov, A Yu ^a   Bellotti, Enrico ^a   Moustakas, Theodore D ^a  

^a Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; DEEP ULTRAVIOLET LED; DEEP UV; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; DRIVE CURRENTS; DRIVING CURRENT; EXTERNAL QUANTUM EFFICIENCY; OPTICAL POWER; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

CRYSTAL GROWTH; GALLIUM; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR QUANTUM WIRES; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 76449110453     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903400     Document Type: Article

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