Photoconductive detectors based on partially ordered AlxGa1-xN alloys grown by molecular beam epitaxy

Applied Physics Letters

Volumn 74, Issue 15, 1999, Pages 2203-2205

  Misra, M ^a   Korakakis, D ^a,b   Ng, H M ^a   Moustakas, T D ^a  

^a Boston University   (United States)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ENERGY GAP; MOLECULAR BEAM EPITAXY; ORDER DISORDER TRANSITIONS; PHOTOCONDUCTING DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH;

MOLE FRACTION; PHOTOCONDUCTIVE DETECTORS;

PHOTODETECTORS;

EID: 0032613762     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123801     Document Type: Article

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