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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 1, 2012, Pages

In situ study of the atomic layer deposition of HfO 2 on Si

(4) Kolanek, Krzysztof a Tallarida, Massimo a Michling, Marcel a Schmeisser, Dieter a

a BRANDENBURG UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE; CHEMICAL NATURE; COMPLEX BEHAVIOR; CORE-LEVEL LINES; CORRELATION LENGTHS; GROWTH MODELS; GROWTH PER CYCLE; HEIGHT-HEIGHT CORRELATION FUNCTIONS; HIGH-RESOLUTION SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY; IN-SITU; IN-SITU STUDY; INITIAL STAGES; INTERFACIAL DIPOLES; LOSS FUNCTIONS; ROOT MEAN SQUARE; ROUGHNESS EXPONENT; SCALING EXPONENT; SECONDARY ELECTRONS; SI(0 0 1); SURFACE FRACTAL DIMENSIONS; SURFACE-SENSITIVE TECHNIQUE; TWO LAYERS; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; VALENCE-BAND MAXIMUMS;

ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC PROPERTIES; ENERGY DISSIPATION; FRACTAL DIMENSION; HAFNIUM; HAFNIUM OXIDES; PHOTOELECTRON SPECTROSCOPY; SILICON; SILICON COMPOUNDS; SURFACE ROUGHNESS; SYNCHROTRON RADIATION; ULTRATHIN FILMS;

SURFACE MORPHOLOGY;

EID: 84855585823 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3668080 Document Type: Article

Times cited : (15)

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