Using scaling laws to understand the growth mechanism of atomic layer deposited WNxCy films on methyl-terminated surfaces

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Hoyas, A Martin ^a,c   Schuhmacher, J ^a   Whelan, C M ^a   Landaluce, T Fernandez ^a   Vanhaeren, D ^a   Maex, K ^a,c   Celis, J P ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Katholieke Universiteit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILM GROWTH; MONOLAYERS; NONLINEAR SYSTEMS; SUBSTRATES; SURFACE PHENOMENA; TUNGSTEN CARBIDE;

ATOMIC LAYER DEPOSITION (ALD); FILM DENSITY; NONCONSERVATIVE GROWTH; TUNGSTEN NITRIDE CARBIDE;

THIN FILMS;

EID: 33845786072     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2363241     Document Type: Article

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