In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope

Thin Solid Films

Volumn 518, Issue 16, 2010, Pages 4688-4691

  Kolanek, Krzysztof ^a   Tallarida, Massimo ^a   Karavaev, Konstantin ^a   Schmeisser, Dieter ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Atomic force microscopy; Atomic layer deposition; High k dielectric thin films

Indexed keywords

ATOMIC FORCE MICROSCOPES; ATOMIC LAYER; AUTOCORRELATION FUNCTIONS; HIGH-K DIELECTRIC THIN FILMS; IN-SITU; IN-SITU STUDY; INITIAL STAGES; ROOT MEAN SQUARE ROUGHNESS; SI(0 0 1); SURFACE FRACTAL DIMENSIONS; SURFACE HEIGHT; TETRAKIS;

ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; DEPOSITION; DIELECTRIC MATERIALS; FRACTAL DIMENSION; HAFNIUM; HAFNIUM COMPOUNDS; REGRESSION ANALYSIS; SILICON COMPOUNDS; SURFACE TOPOGRAPHY; THIN FILMS; VACUUM;

ATOMS;

EID: 77955644916     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.12.060     Document Type: Conference Paper

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