Effect of wet chemical substrate pretreatment on the growth behavior of Ta(N) films deposited by thermal ALD

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 2064-2067

  Strehle, S ^a   Schumacher, H ^a   Schmidt, D ^a   Knaut, M ^a   Albert, M ^a   Bartha, J W ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

ALD; Film growth; In situ AFM; In situ XPS; Substrate pretreatment; Tantalum nitride film

Indexed keywords

CARBON FILMS; MOLECULAR BEAM EPITAXY; NONMETALS; OXYGEN; SORPTION; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; SURFACE ROUGHNESS; TANTALUM;

ALD; CARBON CONTAINING; CHEMICAL-; CYCLE NUMBERS; FILM GROWTH; FILM-THICKNESS; GROWTH BEHAVIOR; IN DEPENDENCE; IN SITU AFM; IN SITU XPS; IN-SITU; INTERFACE CONDITIONS; MICROELECTRONIC APPLICATIONS; PRE-TREATMENTS; STEP COVERAGE; SUBSTRATE PRE TREATMENTS; SUBSTRATE PRETREATMENT; SUBSTRATE SURFACES; TANTALUM-NITRIDE FILM;

ATOMIC LAYER DEPOSITION;

EID: 52149097343     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.020     Document Type: Article

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