Theoretical simulation of surface evolution using the random deposition and surface relaxation for metal oxide film in atomic layer deposition

Journal of Materials Science and Technology

Volumn 26, Issue 4, 2010, Pages 371-374

  Ahn, Ji Hoon ^a   Kwon, Se Hun ^a   Kim, Jin Hyock ^b   Kim, Ja Yong ^b   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Atomic layer deposition; Random deposition

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; FILM GROWTH; METALLIC COMPOUNDS; METALS; MICROELECTRONICS; OXIDE FILMS; SURFACE RELAXATION; THIN FILMS; ULTRATHIN FILMS;

DEPOSITION BEHAVIOR; DEPOSITION METHODS; GROWTH CHARACTERISTIC; MICROELECTRONICS INDUSTRY; NANO-METER SCALE; RANDOM DEPOSITION; SURFACE EVOLUTION; THEORETICAL SIMULATION;

DEPOSITION;

EID: 79551618438     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1005-0302(10)60061-8     Document Type: Article

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