Atomic layer deposition of HfO2 investigated in situ by means of a noncontact atomic force microscopy

Materials Science- Poland

Volumn 28, Issue 3, 2010, Pages 731-740

  Kolanek, K ^a   Tallarida, M ^a   Schmeisser, D ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Atomic force microscopy; Atomic layer deposition; High k dielectric thin films

Indexed keywords

ATOMIC FORCE MICROSCOPES; DEPOSITION PROCESS; GROWTH MODELS; GROWTH PROCESS; HIGH-K DIELECTRIC THIN FILMS; IN-SITU; INITIAL STAGES; LAYER THICKNESS; NON-CONTACT MODE; NONCONTACT ATOMIC FORCE MICROSCOPY; PARAMETER VALUES; ROOT MEAN SQUARE; SI(0 0 1); SURFACE HEIGHT; TETRAKIS;

ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; DEPOSITION; DIELECTRIC MATERIALS; GRAPHIC METHODS; HAFNIUM; HAFNIUM COMPOUNDS; SILICON COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS; VAPOR DEPOSITION;

FILM GROWTH;

EID: 79951937609     PISSN: 01371339     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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