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Volumn 84, Issue 20, 2011, Pages

Electronic structure of realistically extended atomistically resolved disordered Si:P δ-doped layers

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Indexed keywords


EID: 82655166221     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.205309     Document Type: Article
Times cited : (52)

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