Fermi-level oscillation in n-type δ-doped Si: A self-consistent tight-binding approach

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 12, 2005, Pages

  Cartoixa X ^a,b   Chang, Y C ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29744459661     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.125330     Document Type: Article

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