Atomically precise placement of single dopants in si

Physical Review Letters

Volumn 91, Issue 13, 2003, Pages

  Schofield, S R ^a   Curson, N J ^a   Simmons, M Y ^a   Ruess F J ^a   Hallam, T ^a   Oberbeck, L ^a   Clark, R G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; DOPING (ADDITIVES); LITHOGRAPHY; PHOSPHORUS;

ATOMIC-SCALE ELECTRONIC DEVICES;

SILICON;

EID: 0242321306     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.136104     Document Type: Article

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