SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 95, Issue 14, 2009, Pages

Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices

(2) Goh, K E J a,b Simmons, M Y a

a UNIVERSITY OF NEW SOUTH WALES (Australia)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; CRYSTAL QUALITIES; DELTA-DOPED; DOPED DEVICES; ELECTRON MEAN FREE PATH; ELECTRON TRANSPORT; HIGH GROWTH RATE; LOW TEMPERATURES; MAGNETO-TRANSPORT MEASUREMENT; PHASE-COHERENCE LENGTH; SI MOLECULAR BEAM EPITAXY;

CRYSTAL GROWTH; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANNING TUNNELING MICROSCOPY; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70349897219 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3245313 Document Type: Article

Times cited : (17)

References (25)

1
- 22144498431
- Scanning probe microscopy for silicon device fabrication
- DOI 10.1080/08927020500035580
- M. Y. Simmons, F. J. RueΒ, K. E. J. Goh, T. Hallam, S. R. Schofield, L. Oberbeck, N. J. Curson, A. R. Hamilton, M. J. Butcher, R. G. Clark, and T. C. G. Reusch, Mol. Simul. 0892-7022 31, 505 (2005). 10.1080/08927020500035580 (Pubitemid 40971867)
- (2005) Molecular Simulation , vol.31 , Issue.6-7 , pp. 505-514
- Simmons, M.Y.¹ Ruess, F.J.² Goh, K.E.J.³ Hallam, T.⁴ Schofield, S.R.⁵ Oberbeck, L.⁶ Curson, N.J.⁷ Hamilton, A.R.⁸ Butcher, M.J.⁹ Clark, R.G.¹⁰ Reusch, T.C.G.¹¹

2
- 0032116551
- 0038-1101,. 10.1016/S0038-1101(97)00302-X
- J. R. Tucker and T. -C. Shen, Solid-State Electron. 0038-1101 42, 1061 (1998). 10.1016/S0038-1101(97)00302-X
- (1998) Solid-State Electron. , vol.42 , pp. 1061
- Tucker, J.R.¹ Shen, T.-C.²

3
- 7544248820
- 1530-6984,. 10.1021/nl048808v
- F. J. Ruess, L. Oberbeck, M. Y. Simmons, K. E. J. Goh, A. R. Hamilton, T. Hallam, S. R. Schofield, N. J. Curson, and R. G. Clark, Nano Lett. 1530-6984 4, 1969 (2004). 10.1021/nl048808v
- (2004) Nano Lett. , vol.4 , pp. 1969
- Ruess, F.J.¹ Oberbeck, L.² Simmons, M.Y.³ Goh, K.E.J.⁴ Hamilton, A.R.⁵ Hallam, T.⁶ Schofield, S.R.⁷ Curson, N.J.⁸ Clark, R.G.⁹

4
- 33947523647
- 0163-1829, (R). 10.1103/PhysRevB.75.121303
- F. J. RueΒ, W. Pok, K. E. J. Goh, A. R. Hamilton, and M. Y. Simmons, Phys. Rev. B 0163-1829 75, 121303 (R) (2007). 10.1103/PhysRevB.75.121303
- (2007) Phys. Rev. B , vol.75 , pp. 121303
- Rueß, F.J.¹ Pok, W.² Goh, K.E.J.³ Hamilton, A.R.⁴ Simmons, M.Y.⁵

5
- 0004066963
- edited by E. F. Schubert (Cambridge University Press, Cambridge).
- Delta-doping in Semiconductors, edited by, E. F. Schubert, (Cambridge University Press, Cambridge, 1996).
- (1996) Delta-doping in Semiconductors

6
- 65249138817
- 1530-6984,. 10.1021/nl803196f
- A. Fuhrer, M. Füchsle, T. C. G. Reusch, B. Weber, and M. Y. Simmons, Nano Lett. 1530-6984 9, 707 (2009). 10.1021/nl803196f
- (2009) Nano Lett. , vol.9 , pp. 707
- Fuhrer, A.¹ Füchsle, M.² Reusch, T.C.G.³ Weber, B.⁴ Simmons, M.Y.⁵

7
- 0032516155
- A silicon-based nuclear spin quantum computer
- DOI 10.1038/30156
- B. E. Kane, Nature (London) 0028-0836 393, 133 (1998). 10.1038/30156 (Pubitemid 28242245)
- (1998) Nature , vol.393 , Issue.6681 , pp. 133-137
- Kane, B.E.¹

8
- 6244251920
- 0021-8979,. 10.1063/1.358597
- D. J. Eaglesham, J. Appl. Phys. 0021-8979 77, 3597 (1995). 10.1063/1.358597
- (1995) J. Appl. Phys. , vol.77 , pp. 3597
- Eaglesham, D.J.¹

9
- 4644338910
- 0003-6951,. 10.1063/1.1784881
- L. Oberbeck, N. J. Curson, T. Hallam, M. Y. Simmons, G. Bilger, and R. G. Clark, Appl. Phys. Lett. 0003-6951 85, 1359 (2004). 10.1063/1.1784881
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1359
- Oberbeck, L.¹ Curson, N.J.² Hallam, T.³ Simmons, M.Y.⁴ Bilger, G.⁵ Clark, R.G.⁶

10
- 19144371378
- 0003-6951,. 10.1063/1.1827940
- K. E. J. Goh, L. Oberbeck, M. Y. Simmons, A. R. Hamilton, and R. G. Clark, Appl. Phys. Lett. 0003-6951 85, 4953 (2004). 10.1063/1.1827940
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4953
- Goh, K.E.J.¹ Oberbeck, L.² Simmons, M.Y.³ Hamilton, A.R.⁴ Clark, R.G.⁵

11
- 25444527987
- Relevance of phosphorus incorporation and hydrogen removal for Si : P δ-doped layers fabricated using phosphine
- DOI 10.1002/pssa.200460764
- K. E. J. Goh, L. Oberbeck, and M. Y. Simmons, Phys. Status Solidi A 0031-8965 202, 1002 (2005). 10.1002/pssa.200460764 (Pubitemid 41365054)
- (2005) Physica Status Solidi (A) Applications and Materials , vol.202 , Issue.6 , pp. 1002-1005
- Goh, K.E.J.¹ Oberbeck, L.² Simmons, M.Y.³

12
- 54749145467
- 0021-8979,. 10.1063/1.2977750
- T. C. G. Reusch, K. E. J. Goh, W. Pok, W. -C. N. Lo, S. R. McKibbin, and M. Y. Simmons, J. Appl. Phys. 0021-8979 104, 066104 (2008). 10.1063/1.2977750
- (2008) J. Appl. Phys. , vol.104 , pp. 066104
- Reusch, T.C.G.¹ Goh, K.E.J.² Pok, W.³ Lo, W.-C.N.⁴ McKibbin, S.R.⁵ Simmons, M.Y.⁶

13
- 33144458986
- Influence of doping density on electronic transport in degenerate Si:P δ -doped layers
- DOI 10.1103/PhysRevB.73.035401, 035401
- K. E. J. Goh, L. Oberbeck, M. Y. Simmons, A. R. Hamilton, and M. J. Butcher, Phys. Rev. B 0163-1829 73, 035401 (2006). 10.1103/PhysRevB.73.035401 (Pubitemid 43270618)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.73 , Issue.3 , pp. 1-6
- Goh, K.E.J.¹ Oberbeck, L.² Simmons, M.Y.³ Hamilton, A.R.⁴ Butcher, M.J.⁵

14
- 36148981524
- 0163-1829, () 10.1103/PhysRevB.76.193305;, Phys. Rev. B 0163-1829 77, 235410 (2008). 10.1103/PhysRevB.77.235410
- K. E. J. Goh, M. Y. Simmons, and A. R. Hamilton, Phys. Rev. B 0163-1829 76, 193305 (2007) 10.1103/PhysRevB.76.193305; K. E. J. Goh, M. Y. Simmons, and A. R. Hamilton, Phys. Rev. B 0163-1829 77, 235410 (2008). 10.1103/PhysRevB.77. 235410
- (2007) Phys. Rev. B , vol.76 , pp. 193305
- Goh, K.E.J.¹ Simmons, M.Y.² Hamilton, A.R.³ Goh, K.E.J.⁴ Simmons, M.Y.⁵ Hamilton, A.R.⁶

15
- 13444249779
- Weak localization thickness measurements of Si:P delta-layers
- DOI 10.1063/1.1842366
- D. F. Sullivan, B. E. Kane, and P. E. Thompson, Appl. Phys. Lett. 0003-6951 85, 6362 (2004). 10.1063/1.1842366 (Pubitemid 40211465)
- (2004) Applied Physics Letters , vol.85 , Issue.26 , pp. 6362-6364
- Sullivan, D.F.¹ Kane, B.E.² Thompson, P.E.³

16
- 53649092827
- 0003-6951,. 10.1063/1.2996582
- K. E. J. Goh, Y. Augarten, L. Oberbeck, and M. Y. Simmons, Appl. Phys. Lett. 0003-6951 93, 142105 (2008). 10.1063/1.2996582
- (2008) Appl. Phys. Lett. , vol.93 , pp. 142105
- Goh, K.E.J.¹ Augarten, Y.² Oberbeck, L.³ Simmons, M.Y.⁴

17
- 70349909138
- This was determined from the P density of the control sample through Hall-effect measurements and prior calibration of the PH3 fluence with P coverage in Ref..
- This was determined from the P density of the control sample through Hall-effect measurements and prior calibration of the PH3 fluence with P coverage in Ref..

18
- 84914027604
- 0734-2101,. 10.1116/1.576158
- R. J. Hamers and U. K. Köhler, J. Vac. Sci. Technol. A 0734-2101 7, 2854 (1989). 10.1116/1.576158
- (1989) J. Vac. Sci. Technol. A , vol.7 , pp. 2854
- Hamers, R.J.¹ Köhler, U.K.²

19
- 0030381467
- 0039-6028,. 10.1016/S0039-6028(96)01129-6
- Z. Zhang, M. A. Kulakov, and B. Bullemer, Surf. Sci. 0039-6028 369, L131 (1996). 10.1016/S0039-6028(96)01129-6
- (1996) Surf. Sci. , vol.369 , pp. 131
- Zhang, Z.¹ Kulakov, M.A.² Bullemer, B.³

20
- 0000804481
- 0031-9007,. 10.1103/PhysRevLett.84.4128
- T. Miyazaki, T. Uda, and K. Terakura, Phys. Rev. Lett. 0031-9007 84, 4128 (2000). 10.1103/PhysRevLett.84.4128
- (2000) Phys. Rev. Lett. , vol.84 , pp. 4128
- Miyazaki, T.¹ Uda, T.² Terakura, K.³

21
- 0037091803
- 0163-1829,. 10.1103/PhysRevB.65.161302
- M. Nishizawa, T. Yasuda, S. Yamasaki, K. Miki, M. Shinohara, N. Kamakura, Y. Kimura, and M. Niwano, Phys. Rev. B 0163-1829 65, 161302 (2002). 10.1103/PhysRevB.65.161302
- (2002) Phys. Rev. B , vol.65 , pp. 161302
- Nishizawa, M.¹ Yasuda, T.² Yamasaki, S.³ Miki, K.⁴ Shinohara, M.⁵ Kamakura, N.⁶ Kimura, Y.⁷ Niwano, M.⁸

22
- 71949098775
- Investigating the regrowth surface of Si:P delta-layers towards vertically stacked three dimensional devices
- 0003-6951 (submitted).
- S. R. McKibbin, W. R. Clarke, A. Fuhrer, T. C. G. Reusch, and M. Y. Simmons, " Investigating the regrowth surface of Si:P delta-layers towards vertically stacked three dimensional devices.," Appl. Phys. Lett. 0003-6951 (submitted).
- Appl. Phys. Lett.
- McKibbin, S.R.¹ Clarke, W.R.² Fuhrer, A.³ Reusch, T.C.G.⁴ Simmons, M.Y.⁵

23
- 0345504803
- 0959-7174,. 10.1088/0959-7174/9/2/308
- I. L. Aleiner, B. L. Altshuler, and M. E. Gershenson, Waves Random Media 0959-7174 9, 201 (1999). 10.1088/0959-7174/9/2/308
- (1999) Waves Random Media , vol.9 , pp. 201
- Aleiner, I.L.¹ Altshuler, B.L.² Gershenson, M.E.³

24
- 0021503880
- 0031-9015,. 10.1143/JPSJ.53.3540
- A. Kawabata, J. Phys. Soc. Jpn. 0031-9015 53, 3540 (1984). 10.1143/JPSJ.53.3540
- (1984) J. Phys. Soc. Jpn. , vol.53 , pp. 3540
- Kawabata, A.¹

25
- 14944344452
- Weak localization in high-quality two-dimensional systems
- DOI 10.1103/PhysRevB.70.245311, 245311
- S. McPhail, C. E. Yasin, A. R. Hamilton, M. Y. Simmons, E. H. Linfield, M. Pepper, and D. A. Ritchie, Phys. Rev. B 0163-1829 70, 245311 (2004). 10.1103/PhysRevB.70.245311 (Pubitemid 40362463)
- (2004) Physical Review B - Condensed Matter and Materials Physics , vol.70 , Issue.24 , pp. 1-16
- McPhail, S.¹ Yasin, C.E.² Hamilton, A.R.³ Simmons, M.Y.⁴ Linfield, E.H.⁵ Pepper, M.⁶ Ritchie, D.A.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.