Atomistic simulation of realistically sized nanodevices using NEMO 3-D-Part II: Applications

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2090-2099

  Klimeck, Gerhard ^a,b   Ahmed, Shaukh Shahid ^a   Kharche, Neerav ^a   Korkusinski, Marek ^c   Usman, Muhammad ^a   Prada, Marta ^a   Boykin, Timothy B ^d  

^a PURDUE UNIVERSITY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

Atomistic simulation; Keating model; Nanostructures; Nanowire; NEMO 3 D; Piezoelectricity; Quantum computation; Quantum dot (QD); Quantum well (QW); Strain; Tight binding; Valley splitting (VS)

Indexed keywords

COMPUTER SIMULATION; ELECTRON DEVICES; NANOWIRES; PIEZOELECTRICITY; QUANTUM COMPUTERS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

ATOMISTIC SIMULATION; KEATING MODEL; NANODEVICES; NANOELECTRONIC MODELING;

NANOELECTRONICS;

EID: 41749112698     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904877     Document Type: Article

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