Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Nature Physics

Volumn 4, Issue 8, 2008, Pages 656-661

  Lansbergen, G P ^a   Rahman, R ^b   Wellard, C J ^c   Woo, I ^b   Caro, J ^a   Collaert, N ^d   Biesemans, S ^d   Klimeck, G ^b,e   Hollenberg, L C L ^c   Rogge, S ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Purdue University ^*  (United States)

^c UNIVERSITY OF MELBOURNE   (Australia)

^d IMEC   (Belgium)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; FINFET; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WELLS; SILICON; SINGLE ELECTRON TRANSISTORS;

ATOMIC PRECISION; CONFINEMENT TRANSITIONS; DEGREE OF CONFINEMENT; DEGREE OF HYBRIDIZATION; EXPERIMENTAL EVIDENCE; GATE POTENTIALS; HYBRID MOLECULES; NUCLEAR POTENTIALS;

CRYSTAL ATOMIC STRUCTURE;

EID: 48749117974     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys994     Document Type: Article

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