Spectroscopy of few-electron single-crystal silicon quantum dots

Nature Nanotechnology

Volumn 5, Issue 7, 2010, Pages 502-505

  Fuechsle, Martin ^a   Mahapatra, S ^a   Zwanenburg, F A ^a   Friesen, Mark ^b   Eriksson, M A ^b   Simmons, Michelle Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOCRYSTALS; QUANTUM OPTICS; SEMICONDUCTOR QUANTUM DOTS; SILICON WAFERS; SINGLE CRYSTALS;

ELECTRICAL CONDUCTION; HETEROGENEOUS INTERFACES; PERFORMANCE OF DEVICES; QUANTUM SEMICONDUCTOR DEVICES; QUANTUM-INFORMATION PROCESSING; SINGLE CRYSTAL SILICON; SINGLE-CRYSTAL DEVICES; SINGLE-CRYSTAL SEMICONDUCTORS;

MONOCRYSTALLINE SILICON;

QUANTUM DOT; SILICON;

ARTICLE; CRYSTAL; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON; PRIORITY JOURNAL; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SPECTROSCOPY;

EID: 77955228949     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2010.95     Document Type: Article

References (32)

1. Leong, M., Doris, B., Kedzierski, J., Rim, K. & Yang, M. Silicon device scaling to the sub-10-nm regime. Science 306, 2057-2060 (2004).
2. Elzerman, J. M. et al. Single-shot read-out of an individual electron spin in a quantum dot. Nature 430, 431-435 (2004).
3. Petta, J. R. et al. Coherent manipulation of coupled electron spins in semiconductor quantum dots. Science 309, 2180-2184 (2005).
4. Shaji, N. et al. Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot. Nature Phys. 4, 540-544 (2008).
5. Angus, S. J., Ferguson, A. J., Dzurak, A. S. & Clark, R. G. Gate-defined quantum dots in intrinsic silicon. Nano Lett. 7, 2051-2055 (2007).
6. Liu, H. W. et al. Pauli-spin-blockade transport through a silicon double quantum dot. Phys. Rev. B 77, 073310 (2008).
7. Nordberg Nordberg, E. P. et al. Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry. Phys. Rev. B 80 115331 (2009).
8. Xiang, J. et al. Ge/Si nanowire heterostructures as high-performance field-effect transistors. Nature 441, 489-493 (2006).
9. Zwanenburg, F. A., van Rijmenam, C. E. W. M., Fang, Y., Lieber, C. M. & Kouwenhoven, L. P. Spin states of the first four holes in a silicon nanowire quantum dot. Nano Lett. 9, 1071-1079 (2009).
10. de Sousa, R. & Das Sarma, S. Theory of nuclear-induced spectral diffusion: spin decoherence of phosphorus donors in Si and GaAs quantum dots. Phys. Rev. B 68, 115322 (2003).
11. Culcer, D., Hu, X. D. & Das Sarma, S. Dephasing of Si spin qubits due to charge noise. Appl. Phys. Lett. 95, 073102 (2009).
12. Kane, B. E. A silicon-based nuclear spin quantum computer. Nature 393, 133-137 (1998).
13. Loss, D. & DiVincenzo, D. P. Quantum computation with quantum dots. Phys. Rev. A 57, 120-126 (1998).
14. Vrijen, R. et al. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures. Phys. Rev. A 62, 012306 (2000).
15. Friesen, M. et al. Practical design and simulation of silicon-based quantum-dot qubits. Phys. Rev. B 67, 121301 (2003).
16. Hollenberg, L. C. L. et al. Charge-based quantum computing using single donors in semiconductors. Phys. Rev. B 69, 113301 (2004).
17. Lyding, J. W., Shen, T. C., Hubacek, J. S., Tucker, J. R. & Abeln, G. C. Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh-vacuum scanning tunneling microscope. Appl. Phys. Lett. 64, 2010-2012 (1994).
18. Ruess, F. J. et al. Realization of atomically controlled dopant devices in silicon. Small 3, 563-567 (2007).
19. Lin, D. S., Ku, T. S. & Sheu, T. J. Thermal reactions of phosphine with Si(100): a combined photoemission and scanning-tunneling-microscopy study. Surf. Sci. 424, 7-18 (1999).
20. Wilson, H. F. et al. Phosphine dissociation on the Si(001) surface. Phys. Rev. Lett. 93, 226102 (2004).
21. Kouwenhoven, L. P., Austing, D. G. & Tarucha, S. Few-electron quantum dots. Rep. Prog. Phys. 64, 701-736 (2001).
22. Kouwenhoven, L. P. et al. in NATO Advanced Study Institute on Mesoscopic Electron Transport (eds Sohn, L. L., Kouwenhoven, L. P. & Schön G.) 105-214 (Springer, 1997).
23. Pierre, M. et al. Single-donor ionization energies in a nanoscale CMOS channel. Nature Nanotech. 5, 133-137 (2010).
24. Carter, D. J., Warschkow, O., Marks, N. A. & McKenzie, D. R. Electronic structure models of phosphorus delta-doped silicon. Phys. Rev. B 79, 033204 (2009).
25. Qian, G. F., Chang, Y. C. & Tucker, J. R. Theoretical study of phosphorus delta-doped silicon for quantum computing. Phys. Rev. B 71, 045309 (2005).
26. Boykin, T. B. et al. Valley splitting in strained silicon quantum wells. Appl. Phys. Lett. 84, 115-117 (2004).
27. Fasth, C., Fuhrer, A., Samuelson, L., Golovach, V. N. & Loss, D. Direct measurement of the spin-orbit interaction in a two-electron InAs nanowire quantum dot. Phys. Rev. Lett. 98, 266801 (2007).
28. Zumbühl, D. M., Marcus, C. M., Hanson, M. P. & Gossard, A. C. Cotunneling spectroscopy in few-electron quantum dots. Phys. Rev. Lett. 93, 256801 (2004).
29. Lim, W. H. et al. Observation of the single-electron regime in a highly tunable silicon quantum dot. Appl. Phys. Lett. 95, 242102 (2009).
30. Könemann, J. et al. Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures. Phys. Rev. B 64 155314 (2001).
31. Fuhrer, A., Füchsle, M., Reusch, T. C. G., Weber, B. & Simmons, M. Y. Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon. Nano Lett. 9, 707-710 (2009).
32. Ruess, F. J. et al. The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures. Nanotechnology 16, 2446-2449 (2005).