Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

Applied Physics Letters

Volumn 81, Issue 17, 2002, Pages 3197-3199

  Oberbeck, L ^a   Curson, N J ^a   Simmons, M Y ^a   Brenner, R ^a   Hamilton, A R ^a   Schofield, S R ^a   Clark, R G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT DIFFUSION; DOPANT SEGREGATION; DOPED LAYERS; ELECTRICAL ACTIVATION; EPITAXIAL SILICON; HALL EFFECT MEASUREMENT; PHOSPHORUS ATOM; ROOM TEMPERATURE; SI(100) SURFACE; SOLID-STATE QUANTUM COMPUTERS;

COMPUTER ARCHITECTURE; DOPING (ADDITIVES); ELECTRON MOBILITY; HALL EFFECT; PHOSPHORUS; PHOSPHORUS COMPOUNDS; QUANTUM COMPUTERS; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; SECONDARY ION MASS SPECTROMETRY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955983673     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516859     Document Type: Article

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