Electronic structure and transmission characteristics of SiGe nanowires

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 350-354

  Kharche, Neerav ^a   Luisier, Mathieu ^c   Boykin, Timothy B ^d   Klimeck, Gerhard ^a,b  

^a Purdue University   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c ETH ZURICH   (Switzerland)

^d UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

Brillouin zone unfolding; Nanowires; NEGF; Open boundary conditions; SiGe

Indexed keywords

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON ALLOYS; SURFACE ROUGHNESS; WAVE FUNCTIONS;

BRILLOUIN ZONE-UNFOLDING; NANOWIRES; NEGF; OPEN BOUNDARY CONDITIONS; SIGE;

ELECTRIC WIRE;

EID: 50949094435     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-008-0191-9     Document Type: Article

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