Theoretical study of phosphorous δ-doped silicon for quantum computing

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 4, 2005, Pages

  Qian, Gefei ^a   Chang, Yia Chung ^a   Tucker, J R ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOSPHORUS; SILICON;

ARTICLE; ELECTRIC POTENTIAL; ELECTRON; MATHEMATICAL ANALYSIS; MATHEMATICAL COMPUTING; QUANTUM THEORY; THEORETICAL STUDY;

EID: 15744388510     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.045309     Document Type: Article

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