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Volumn 20, Issue 2, 2001, Pages 177-180
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A tight binding calculation of δ-doped quantum wells in Si
a
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Author keywords
[No Author keywords available]
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Indexed keywords
APPROXIMATION THEORY;
BINDING ENERGY;
ELECTRIC POTENTIAL;
ELECTRONIC STRUCTURE;
FERMI LEVEL;
HAMILTONIANS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DOPING;
ENVELOPE FUNCTION APPROXIMATION (EFA);
SEMI-EMPIRICAL HAMILTONIAN MATRICES;
THOMAS-FERMI APPROXIMATIONS;
TIGHT BINDING CALCULATIONS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0034912473
PISSN: 09270256
EISSN: None
Source Type: Journal
DOI: 10.1016/S0927-0256(00)00175-0 Document Type: Article |
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Times cited : (3)
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References (15)
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