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Volumn 85, Issue 21, 2004, Pages 4953-4955

Effect of encapsulation temperature on Si:P δ -doped layers

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ENCAPSULATION; THERMAL EFFECTS;

DOPANTS; ELECTRICAL ACTIVATION; PHASE COHERENCE; ROOM TEMPERATURE;

SEMICONDUCTING SILICON;

EID: 19144371378 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1827940 Document Type: Article

Times cited : (52)

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