Moving toward nano-TCAD through multimillion-atom quantum-dot simulations matching experimental data

IEEE Transactions on Nanotechnology

Volumn 8, Issue 3, 2009, Pages 330-344

  Usman, Muhammad ^a   Ryu, Hoon ^a   Woo, Insoo ^b   Ebert, David S ^b   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

^b Purdue University   (United States)

Author keywords

Aspect ratio (AR); Quantum dots (QDs); Strain; Strain reducing layer; Wave function; Wavelength

Indexed keywords

3D SIMULATIONS; CAPPING LAYER; ELECTRONIC STRUCTURE CALCULATIONS; EXPERIMENTAL DATA; GEOMETRY PARAMETER; INAS/GAAS QUANTUM DOTS; INTERACTIVE SIMULATIONS; INTERNAL MODELS; LOW LOSS; NONLINEAR BEHAVIOR; QUANTITATIVE SIMULATION; QUANTUM DOTS; QUANTUM DOTS (QDS); REDUCED ORDER MODELS; RELATIVE IMPORTANCE; SIMPLE MODEL; STRAIN REDUCING LAYER;

ASPECT RATIO; ATOMS; COMPUTER AIDED DESIGN; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM; LIGHT; LIGHT SOURCES; OPTICAL COMMUNICATION; PRESSURE DROP; SIMULATORS; THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS; WAVE FUNCTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 67249140171     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2011900     Document Type: Article

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