Phosphorus δ-doped silicon: Mixed-atom pseudopotentials and dopant disorder effects

Nanotechnology

Volumn 22, Issue 6, 2011, Pages

  Carter, Damien J ^a,b   Marks, Nigel A ^a   Warschkow, Oliver ^c   McKenzie, David R ^c  

^a CURTIN UNIVERSITY   (Australia)

^b Western Australian Interactive Virtual Environments Centre   (Australia)

^c UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL ADVANTAGES; DEVICE MODELLING; DISORDER EFFECT; DOPED SILICON; EXPLICIT MODELS; KEYPOINTS; NUCLEAR CHARGES; PHOSPHORUS ATOM; PSEUDOPOTENTIALS; VALLEY SPLITTING;

ATOMS; DENSITY FUNCTIONAL THEORY; PHOSPHORUS;

DOPING (ADDITIVES);

EID: 79251541175     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/6/065701     Document Type: Article

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