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Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 3, 2009, Pages

Electronic structure models of phosphorus δ -doped silicon

(4) Carter, Damien J a Warschkow, Oliver a Marks, Nigel A b McKenzie, David R a

a UNIVERSITY OF SYDNEY (Australia)

b CURTIN UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 60949097880 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.79.033204 Document Type: Article

Times cited : (56)

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