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Volumn 186, Issue 1-4, 2002, Pages 19-23
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DLTS and PL studies of proton radiation defects in tin-doped FZ silicon
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Author keywords
DLTS; Photoluminescence; Proton irradiation; Tin doped silicon; Tin vacancy complexes
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Indexed keywords
CRYSTAL DEFECTS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
PHOTOLUMINESCENCE;
SEMICONDUCTOR DOPING;
SILICON;
TIN;
RECOMBINATION CENTERS;
PROTON IRRADIATION;
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EID: 0036135387
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(01)00911-9 Document Type: Article |
Times cited : (14)
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References (17)
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