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Volumn 186, Issue 1-4, 2002, Pages 19-23

DLTS and PL studies of proton radiation defects in tin-doped FZ silicon

Author keywords

DLTS; Photoluminescence; Proton irradiation; Tin doped silicon; Tin vacancy complexes

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICON; TIN;

EID: 0036135387     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00911-9     Document Type: Article
Times cited : (14)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.