Peculiarities of vacancy-related defects formation in Si doped with tin

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 541-545

  Khirunenko, L I ^a   Kobzar, O O ^a   Pomozov, Yu V ^a   Sosnin, M G ^a   Tripachko, M O ^a  

^a INSTITUTE OF PHYSICS   (Ukraine)

Author keywords

Irradiation; Silicon; Tin; Vacancy

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; ANNEALING; DOPING (ADDITIVES); ELECTRON IRRADIATION; ELECTRON TRANSITIONS; INFRARED SPECTROSCOPY; LOW TEMPERATURE EFFECTS; PHOTOIONIZATION; RADIATION DAMAGE; SILICON; TIN;

PHOTOTHERMAL IONIZATION SPECTROSCOPY (PTIS); VACANCIES;

CRYSTAL DEFECTS;

EID: 0346686008     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.139     Document Type: Conference Paper

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