Tin-vacancy acceptor levels in electron-irradiated n-type silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 7, 2000, Pages 4535-4544

  Nylandsted Larsen, A ^a   Goubet, J ^a   Mejlholm, P ^a   Sherman Christensen, J ^a   Fanciulli, M ^a   Gunnlaugsson, H ^a   Weyer, G ^a   Wulff Petersen, J ^b  

^a AARHUS UNIVERSITY   (Denmark)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243678567     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.4535     Document Type: Article

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