Defect-impurity interactions in irradiated tin-doped Cz-Si crystals

Physica Status Solidi Conferences

Volumn , Issue 2, 2003, Pages 694-697

  Khirunenko, L I ^a   Kobzar, O A ^a   Pomozov, Yu V ^a   Sosnin, M G ^a   Tripachko, N A ^a   Markevich, V P ^b,c   Murin, L I ^c   Peaker, A R ^b  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALS; DOPING (ADDITIVES); HEAT TREATMENT; INFRARED SPECTROSCOPY; OXYGEN; SILICON; TIN; ATOMS; DEEP LEVEL TRANSIENT SPECTROSCOPY; INFRARED ABSORPTION; LIGHT ABSORPTION;

DEFECT-IMPURITY INTERACTIONS; IMPURITY ATOMS; CARBON ATOMS; DEFECT TRANSFORMATION; DEFECTS INDUCED; FAST ELECTRONS; IR ABSORPTION SPECTRA; IRRADIATED SAMPLES; LOCAL VIBRATIONAL MODE; RADIATION INDUCED DEFECTS;

CRYSTAL GROWTH FROM MELT; CRYSTAL DEFECTS;

EID: 1242310043     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306195     Document Type: Conference Paper

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