C4 defect and its precursors in Si: First-principles theory

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 20, 2008, Pages

  Backlund, D J ^a   Estreicher, S K ^a  

^a TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44049102547     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.205205     Document Type: Article

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