Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

Journal of Materials Science: Materials in Electronics

Volumn 18, Issue 7, 2007, Pages 721-728

  Londos, C A ^a   Antonaras, G D ^a   Potsidi, M S ^a   Aliprantis, D N ^a   Misiuk, A ^b  

^a UNIVERSITY OF ATHENS   (Greece)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DOPED NEUTRON-IRRADIATED SILICON; CARBON RELATED STRUCTURE; HIGH HYDROSTATIC PRESSURE (HTHP);

ABSORPTION SPECTRA; CRYSTALS; HEAT TREATMENT; INFRARED ABSORPTION; IRRADIATION; PARAMAGNETIC RESONANCE;

SILICON;

EID: 34247872868     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-006-9101-8     Document Type: Article

References (34)

1. Y.-H. Lee, J.W. Corbett, Phys. Rev. B9, 4351 (1974)
2. Y.-H. Lee, N.N. Gerasimenko, J.W. Corbett, Phys. Rev. B14, 4506 (1976)
3. Y.-H. Lee, Appl. Phys. Lett. 73, 1119 (1998)
4. A. Carvalho, R. Jones, J. Continho and P.R. Briddon, Phys. Rev. B72, 155208 (2005)
5. G.D. Watkins, Mater. Sci. Semicond. Process. 3, 227 (2000)
6. S. Hayama, G. Davies, K.M. Itoh, J. Appl. Phys. 96, 1754 (2004)
7. G. Davies, R.C. Newman, in Handbook on Semiconductors, vol. 3b. ed. by S. Mahajan (Elsevier Science B.V., Amsterdam) (1996), p. 1557
8. S. Nishikawa, A. Tanaka, T. Yamajl, Appl. Phys. Lett. 60, 2270 (1992)
9. M. Kohyama, S. Takeda, Phys. Rev. B46, 12305 (1992)
10. G. Davies, Mater. Sci. Forum. 38-41, 151 (1989)
11. K. Laithwaite, R.C. Newman, D.H.J. Totterdell, J. Phys. C. 8, 236 (1975)
12. N. Fukata, T. Ohori, M. Suezawa, H. Takahashi, J. Appl. Phys. 91, 5891 (2002)
13. A. Misiuk, in Frontiers of High Pressure Research II, Application of High Pressure to Low-Dimensional Electronic Materials, Series II-vol.48. ed. by H.D. Hochheimer, B. Kuchta, P.K. Dorhout, J.L. Yarger (Kluwer Academic Publishers, Dordrecht, 2001), p. 275
14. A. Misiuk, Mater. Phys. Mech. 1, 119 (2000)
15. ASTM standard test method F123-86
16. J.L. Regolini, J.P. Stroquert, C. Ganter, P. Siffert, J. Electroch. Soc. 133, 2165 (1986)
17. F.A. Johnson, Proc. Phys. Soc. London 73, 265 (1959)
18. F.L. Vook, H.J. Stein, Appl. Phys. Lett. 13, 343 (1965)
19. A. Borghesi, B. Pivac, A. Sassella, A. Stella, J. Appl. Phys. 77, 4169 (1995)
20. H. Bender, Vanhellemont, in Handbook on Semiconductors, vol 3b (Elsevier Science B.V., Amsterdam, 1994), p. 1637
21. G.S. Oehrlein, J.L. Lindstrom, J.W. Corbett, Appl. Phys. Lett. 40, 241 (1982)
22. U. Gosele, Mater. Res. Soc. 59, 419 (1986)
23. F. Simura, T. Higuchi, R.S. Hockett, Appl. Phys. Lett. 53, 69 (1988)
24. R.C Newman, Mater. Res. Soc. 59, 403 (1986)
25. G. Davies, E.C. Lightowlers, M. Stavola, K. Bergman, B. Svenson, (1987) Phys. Rev. B35, 2755
26. E.V. Lavrov, B. B. Nielsen, J.R. Byderg, B. Hourasine, R. Jones, S. Oberg., P.R. Briddon, Phys. Rev. B62, 158 (2002)
27. C.A. Londos, M.S. Potsidi, E. Stakakis, Physica. B340-342, 551 (2003)
28. R.C. Newman, D.H.J. Totterdell, J. Phys. C8, 3944 (1975)
29. C.A. Londos, M.S. Potsidi, G.D. Antonaras, A. Andrianakis, Physica. B376-377, 551 (2006)
30. V. Lavrov, L. Hoffman, B. Bech Nielsen, Phys. Rev. B60, 8081 (1999)
31. G. Davies, K.T. Kun, T. Reade, Phys. Rev. B44, 12146 (1991)
32. T. K. Kwok, Phys. Rev. B51, 17-188 (1995)
33. R. Laiho, M.P. Vlasenko, L.S. Vlasenko, Solid State Commun. 124, 403 (2002)
34. M.S. Potsidi, C.A. Londos, J. Appl. Phys, 100, 033523 (2006)