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Volumn 29, Issue 5, 2011, Pages

Modelling of fluorine based high density plasma for the etching of silica glasses

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR MODEL; ETCHED SURFACE ROUGHNESS; ETCHING RATE; HIGH DENSITY PLASMAS; INPUT PARAMETER; ION SPECIES; METALLIC SITES; MONTE CARLO; OPERATING CONDITION; OUTPUT PARAMETERS; PLASMA KINETIC; PLASMA MODEL; REAL NUMBER; REDEPOSITION MECHANISM; SURFACE MODELS; UNIFORM CELLS;

EID: 80052411763     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3624786     Document Type: Article
Times cited : (20)

References (48)
  • 25
  • 27
    • 29144480144 scopus 로고    scopus 로고
    • Sparse field level set method for non-convex Hamiltonians in 3D plasma etching profile simulations
    • DOI 10.1016/j.cpc.2005.09.010, PII S0010465505005151
    • B. Radjenovic, J. K. Lee, and M. Radmilovic-Radjenovic, Comput. Phys. Commun. 174, 127 (2006). 10.1016/j.cpc.2005.09.010 (Pubitemid 41817561)
    • (2006) Computer Physics Communications , vol.174 , Issue.2 , pp. 127-132
    • Radjenovic, B.1    Lee, J.K.2    Radmilovic-Radjenovic, M.3
  • 31
    • 70350635386 scopus 로고    scopus 로고
    • 10.1088/0022-3727/42/19/194014
    • W. Guo and H. H. Sawin, J. Phys. D 42, 194014 (2009). 10.1088/0022-3727/42/19/194014
    • (2009) J. Phys. D , vol.42 , pp. 194014
    • Guo, W.1    Sawin, H.H.2
  • 37
    • 80052420037 scopus 로고
    • Ph.D. thesis, University of Nantes, France
    • A. Rhallabi, Ph.D. thesis, University of Nantes, France, 1992.
    • (1992)
    • Rhallabi, A.1
  • 41
    • 0001837089 scopus 로고    scopus 로고
    • Heteronuclear and homonuclear surface abstraction reactions of Cl, Br, and F
    • DOI 10.1063/1.369423, PII S0021897999087010
    • G. P. Kota, J. W. Coburn, and D. B. Graves, J. Appl. Phys. 85, 74 (1999). 10.1063/1.369423 (Pubitemid 129710096)
    • (1999) Journal of Applied Physics , vol.85 , Issue.1 , pp. 74-86
    • Kota, G.P.1    Coburn, J.W.2    Graves, D.B.3
  • 47
    • 0037136157 scopus 로고    scopus 로고
    • 2 reactive ion etching
    • DOI 10.1016/S0042-207X(02)00128-8, PII S0042207X02001288
    • S. Hamagushi and H. Ohta, Vacuum 66, 189 (2002). 10.1016/S0042-207X(02) 00128-8 (Pubitemid 34862407)
    • (2002) Vacuum , vol.66 , Issue.3-4 , pp. 189-195
    • Hamaguchi, S.1    Ohta, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.