Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl2 Ar+

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 1, 2007, Pages 126-133

  Elmonser, L ^a   Rhallabi, A ^a   Gaillard, M ^b   Landesman, J P ^a   Talneau, Anne ^c   Pommereau, F ^d   Bouadma, N ^e  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^b Veeco Process Equipment ZI de la Gaud e   (France)

^c CNRS   (France)

^d III V Lab   (France)

^e ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ETCHING; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS;

ETCH RATE; ION BEAM ETCHING; MICROTRENCHING;

ION BEAMS;

EID: 33846196721     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2400689     Document Type: Article

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