Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition

Applied Surface Science

Volumn 254, Issue 11, 2008, Pages 3576-3584

  Marcos, G ^a   Rhallabi, A ^a   Ranson, P ^b  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^b UNIVERSITÉ D'ORLÉANS   (France)

Author keywords

Etching; ICP; Modelling; Plasma; SF 6 O 2; Silicon; Simulation

Indexed keywords

INDUCTIVELY COUPLED PLASMA; PLASMA DEVICES; PLASMA SIMULATION; SILICON; SPUTTERING;

INDUCED COUPLED PLASMA REACTOR (ICP); MICROTRENCHING; SILICON SUBSTRATES; SPUTTERING YIELD;

PLASMA ETCHING;

EID: 39749183548     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.11.051     Document Type: Article

References (27)

1. Boufnichel M., Aachboun S., Grangeon F., Lefaucheux P., and Ranson P. J. Vac. Sci. Technol. B 20 4 (2002)
2. Bell F.H., Joubert O., and Vallier L. Microelectron. Eng. 30 1-4 (1996)
3. Marcos G., Rhallabi A., and Ranson P. J. Vac. Sci. Technol. A 21 1 (2003)
4. Marcos G., Rhallabi A., and Ranson P. J. Vac. Sci. Technol. B 22 4 (2004)
5. A. Rhallabi, Thesis, University of Nantes, 1992.
6. Chevolleau T., Tessier P.Y., Cardinaud C., and Turban G. J. Vac. Sci. Technol. A 15 5 (1997)
7. J.F. Ziegler, TRIM (the Transport of Ions in Matter) IBM-Research, 28-0 Yorktown, NY 105987.
8. Marcus R.K. Glow Discharges Spectroscopies (1993), Plenum Press, New York
9. Helmer B.A., and Graves D.B. J. Vac. Sci. Technol. A 15 4 (1997)
10. G. Marcos, Thesis, University of Orleans, 2002.
11. Lane J.M., Bogart K.H., Klemens F.P., and Lee J.T.C. J. Vac. Sci. Technol. A 18 5 (2000)
12. Vyvoda M.A., Li M., Graves D.B., Lee H., Malyshev M.V., Klemens F.P., Lee J.T.C., and Donnelly V.M. J. Vac. Sci. Technol. B 18 2 (2000)
13. Houlet L., Rhallabi A., and Turban G. Eur. Phys. J. Appl. 6 (1999) 273
14. Mahorowala A.P., and Sawin H.H. J. Vac. Sci. Technol. B 20 3 (2002)
15. L. Houlet, Thesis, University of Nantes, 1999.
16. Carlile R.N., Liang V.C., Palusinski O.A., and Smadi M.M. J. Electrochem. Soc. 135 8 (1988)
17. Blauw M.A., van der Drift E., Marcos G., and Rhallabi A. J. Appl. Phys. 94 11 (2003)
18. Dussart R., Boufnichel M., Marcos G., Basillais A., Benoit R., Tillocher T., Melhaoui X., Estrade-Szwarckopf H., and Ranson P. J. Micromech. Microeng. 14 (2004) 190
19. Mellhaoui X., Dussart R., Tillocher T., Lefaucheux P., Ranson P., Boufnichel M., and Overzet L.J. J. Appl. Phys. 98 (2005)
20. Chang J.P., and Sawin H.H. J. Vac. Sci. Technol. A 15 3 (1997)
21. Kapur P., Bang D.S., McVittie J.P., Saraswat K.C., and Mountsier T. J. Vac. Technol. B 16 3 (1998)
22. Gerodolle A.F., and Pelletier J. IEEE Trans. Electron. Devices 38 9 (1991)
23. Murakawa S., and McVittie J.P. Jpn. J. Appl. Phys. Part I 33 4B (1994)
24. Schaepkens M., and Oehrlein G.S. Appl. Phys. Lett. 72 11 (1998)
25. Nguyen S.V., Dobuzinski D., Stiffler S.R., and Chrisman G. J. Electrochem. Soc. 138 4 (1991)
26. Hoekstra R.J., and Kushner M.J. J. Vac. Sci. Technol. A 16 6 (1998)
27. Rhallabi A., Gaillard M., Elmonser L., Marcos G., Talneau A., Pommereau F., Pagnod-Rossiaux P., Landesman J.P., and Bouadma N. J. Vac. Sci. Technol. B 23 5 (2005)