Simple model for ion-assisted etching using Cl2-Ar inductively coupled plasma: Effect of gas mixing ratio

IEEE Transactions on Plasma Science

Volumn 32, Issue 3 II, 2004, Pages 1344-1351

  Efremov, Alexander M ^a   Kim, Dong Pyo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; DISSOCIATION; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; FLUXES; MATHEMATICAL MODELS; PLASMA DIAGNOSTICS; PLASMA PROBES; REACTIVE ION ETCHING; SURFACE REACTIONS;

ELECTRON ENERGY DISTRIBUTION; GAS MIXING RATIO; LANGMUIR PROBE MEASUREMENTS; OPTICAL EMISSION SPECTROSCOPY; PLASMA CHEMISTRY; PLASMA PARAMETERS; SURFACE KINETICS;

INDUCTIVELY COUPLED PLASMA;

EID: 4344675393     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2004.828413     Document Type: Article

References (36)

1. A. Bogaerts, E. Neyts, R. Gijbels, and J. van der Mullen, "Gas discharge plasma and their applications," Spectrochim. Acta B, vol. 57, pp. 609-658, 2002.
2. J. R. Rooth, Industrial Plasma Engineering. Philadelphia, PA: IOP, 1995.
3. 3 thin films using inductively coupled plasma," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 19, pp. 1063-1067, 2001.
4. W. J. Lee, H. R. Han, J. Lee, and G. Y. Yeom, "A study of lead zirconate titanate etching characteristics using magnetized inductively coupled plasmas," Surf. Coat. Technol., vol. 131, pp. 157-260, 2000.
5. 2 thin films," Appl. Surf. Sci., vol. 185, pp. 27-33, 2001.
6. H. Ying, T. Li, J. Maa, F. Zhang, S. T. Hsu, Y. Gao, and M. Engelhard, "Plasma etching of lead germanate (PGO) ferroelectric thin film," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 19, pp. 1341-1345, 2001.
7. 2-Ar mixture," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 17, pp. 366-371, 1999.
8. 2-Ar plasma," High Energy Chem., vol. 24, pp. 356-361, 1990.
9. 2 plasmas with a photoresist mask," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 17, pp. 799-804, 1999.
10. 2 high-density plasma discharges," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 13, pp. 368-380, 1995.
11. S. Ashida and M. A. Lieberman, "Spatially average (global) model of time-modulated high density chlorine plasmas," Jpn. J. Appl. Phys., vol. 36, pp. 854-861, 1997.
12. A. J. Lichtenberg, I. G. Kouznetsov, Y. T. Lee, M. A. Lieberman, I. D. Kaganovich, and L. D. Tsendin, "Modeling plasma discharges at high electronegativity," Plasma Sources Sci. Technol., vol. 6, pp. 437-449, 1997.
13. M. A. Lieberman and S. Ashida, "Global models of pulse-power-modulated high-density, low pressure discharges," Plasma Sources Sci. Technol., vol. 5, pp. 145-158, 1996.
14. R. S. Wise, D. P. Lymberopoulos, and D. J. Economou, "A two-region model for a radio frequency low-pressure, high-density plasma," Plasma Sources Sci. Technol., vol. 4, pp. 317-331, 1995.
15. M. V. Malyshev and V. M. Donnelly, "Diagnostics of chlorine inductively coupled plasmas. Measurements of electron temperature and electron energy distribution functions," J. Appl. Phys., vol. 87, pp. 1642-1649, 2000.
16. M. V. Malyshev, "Diagnostics of chlorine inductively coupled plasmas: measurements of electron and total positive ion densities," J. Appl. Phys., vol. 90, pp. 1130-1137, 2001.
17. 2-Ar plasma: Experimental investigation and modeling," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 21, pp. 1568-1573, 2003.
18. 2," J. Semicond. Sci. Technol., vol. 1, pp. 197-202, 2001.
19. A. M. Efremov, D. P. Kim, and C. I. Kim, "Volume and heterogeneous chemistry of active species in chlorine plasma," Thin Solid Films, vol. 435, pp. 83-88, 2003.
20. 2 in inductively coupled, chlorine-containing plasmas," J. Appl. Phys., vol. 84, pp. 137-146, 1998.
21. G. P. Kota, J. W. Coburn, and D. B. Graves, "The recombination of chlorine atoms at surfaces," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 16, pp. 270-277, 1998.
22. U. Gerlach-Meyer, "Ion-enhanced gas-surface reactions: A kinetic model for the etching mechanism," Surf. Sci., vol. 103, pp. 524-538, 1981.
23. H. W. Winters and J. W. Coburn, "Surface science aspects of etching reactions," Surf. Sci. Rep., vol. 14, pp. 162-200, 1992.
24. D. C. Gray, I. Tepermeister, and H. H. Sawin, "Phenomenological modeling of ion enhanced surface kinetics in fluorine-based plasma etching," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 11, pp. 1243-1257, 1993.
25. D. I. Slovetsky, "Heterogeneous reactions in nonequilibrium halogen-containing plasmas" (in Russian), Plasma Chem., vol. 15, pp. 208-250, 1989.
26. N. L. Ovchinnikov, V. I. Svettsov, and A. M. Efremov, "Plasmochemical etching of GaAs in chlorine-argon mixtures," Russ. Microelectron., vol. 28, pp. 13-17, 1999.
27. S. Abdallahi-Alibeik, J. P. McVittie, K. C. Savaswat, V. Shkharev, and P. Schoenborn, "Analytical modeling of silicon etch process in high density plasma," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 17, pp. 2485-2491, 1999.
28. C. Lee, D. B. Graves, and M. A. Lieberman, "Role of etch products in polysilicon etching in a high-density chlorine discharge," in Plasma Chem. and Plasma Proc., vol. 16, 1996, pp. 99-120.
29. 2 + HBr etching of polysilicon," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 20, pp. 2106-2114, 2002.
30. M. Shiozawa and K. Nanbu, "Particle modeling of inductively coupled plasma and radicals flow to predict etch rate of silicon," Jpn. J. Appl. Phys., vol. 41, pp. 2213-2219, 2002.
31. B. Chapman, Glow Discharge Processes: Sputtering and Plasma Etching. New York: Wiley, 1980.
32. 2 - Ar plasmas," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 20, pp. 170-173, 2002.
33. 2 - Ar plasmas," J. Appl. Phys., vol. 90, pp. 3182-3191, 2001.
34. A. M. Efremov and V. I. Svettsov, "Dry etching of copper using chlorine: a review," Russ. Microelectron., vol. 31, pp. 179-192, 2002.
35. A. Landsberg and C. L. Hoatson, "The kinetics and equilibria of the gold-chlorine system," J. Less-Common Metals, vol. 22, pp. 327-339, 1970.
36. 2-Ar plasma," J. Kor. Phys. Soc., vol. 42, pp.