Etching studies of silica glasses in SF6 /Ar inductively coupled plasmas: Implications for microfluidic devices fabrication

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 2, 2010, Pages 277-286

  Lallement, L ^a   Gosse, C ^b   Cardinaud, C ^a   Peignon Fernandez, M C ^a   Rhallabi, A ^a  

^a UNIVERSITÉ DE NANTES   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; ETCH RATES; FLUORINE CONCENTRATIONS; FUSED SILICA SUBSTRATES; GLASS SURFACES; ION ASSISTANCE; LARGE ASPERITY; LOCAL VARIATIONS; METALLIC OXIDES; MICRO-FLUIDIC DEVICES; NEUTRAL FLUX; PATTERN TRANSFERS; PLASMA CONDITIONS; SELF-BIAS; SILICA GLASS;

ETCHING; FLUORINE; GAS MIXTURES; GLASS; INDUCTIVELY COUPLED PLASMA; IONS; METALLIC COMPOUNDS; METALS; ORGANIC POLYMERS; OXIDE MINERALS; PHOTORESISTS; QUARTZ; SILICA; SILICON COMPOUNDS; SURFACE CHEMISTRY; SURFACE MORPHOLOGY; SURFACE PROPERTIES; SURFACE ROUGHNESS;

FUSED SILICA;

EID: 77949362898     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3298875     Document Type: Article

References (34)

1. E. Verpoorte and N. F. de Rooij, Proc. IEEE IEEPAD 0018-9219 91, 930 (2003). 10.1109/JPROC.2003.813570
2. N. Kaji, Y. Tezuka, Y. Takamura, M. Ueda, T. Nishimoto, H. Nakanishi, Y. Horiike, and Y. Baba, Anal. Chem. ANCHAM 0003-2700 76, 15 (2004). 10.1021/ac030303m
3. T. Ichiki, Y. Sugiyama, R. Taura, T. Koidesawa, and Y. Horiike, Thin Solid Films THSFAP 0040-6090 435, 62 (2003). 10.1016/S0040-6090(03)00370-5
4. C. Gosse, C. Bergaud, and P. Löw, Top. Appl. Phys. TAPHD4 0303-4216 118, 301 (2009). 10.1007/978-3-642-04258-4-10
5. L. Ceriotti, K. Weible, N. F. de Rooij, and E. Verpoorte, Microelectron. Eng. MIENEF 0167-9317 67-68, 865 (2003). 10.1016/S0167-9317(03)00148-5
6. A. Goyal, V. Hood, and S. Tadigadapa, J. Non-Cryst. Solids JNCSBJ 0022-3093 352, 657 (2006). 10.1016/j.jnoncrysol.2005.11.063
7. H. C. Jung, W. Lu, S. Wang, L. J. Lee, and X. Hu, J. Vac. Sci. Technol. B JVTBD9 1071-1023 24, 3162 (2006). 10.1116/1.2388959
8. T. Ujiie, T. Kikuchi, T. Ichiki, and Y. Horiike, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 39, 3677 (2000). 10.1143/JJAP.39.3677
9. R. A. Heineke, Solid-State Electron. SSELA5 0038-1101 24, 2281 (1975).
10. J. Coburn, J. Appl. Phys. JAPIAU 0021-8979 50, 5210 (1979). 10.1063/1.326660
11. F. Gaboriau, M. -C. Fernandez-Peignon, G. Cartry, and Ch. Cardinaud, J. Vac. Sci. Technol. A JVTAD6 0734-2101 23, 226 (2005). 10.1116/1.1851541
12. E. Thínot, F. Domingo, E. Cambril, and C. Gosse, Microelectron. Eng. MIENEF 0167-9317 83, 1155 (2006). 10.1016/j.mee.2006.01.029
13. P. Leech, Vacuum VACUAV 0042-207X 55, 191 (1999). 10.1016/S0042-207X(99) 00146-3
14. E. Metwalli and G. Pantano, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 207, 21 (2003). 10.1016/S0168-583X(03)00517-2
15. X. Li, T. Abe, and M. Esashi, Sens. Actuators A SAAPEB 0924-4247 87, 139 (2001). 10.1016/S0924-4247(00)00482-9
16. J. H. Park, N. -E. Lee, J. Lee, J. S. Park, and H. D. Park, Microelectron. Eng. MIENEF 0167-9317 82, 119 (2005). 10.1016/j.mee.2005.07.006
17. T. Ichiki, Y. Sugiyama, T. Ujiie, and Y. Horiike, J. Vac. Sci. Technol. B JVTBD9 1071-1023 21, 2188 (2003). 10.1116/1.1612935
18. R. Dussart, J. Micromech. Microeng. JMMIEZ 0960-1317 14, 190 (2004). 10.1088/0960-1317/14/2/004
19. F. Gaboriau, G. Cartry, M. -C. Peignon, and C. Cardinaud, J. Vac. Sci. Technol. B JVTBD9 1071-1023 20, 1514 (2002). 10.1116/1.1495502
20. F. Gaboriau, G. Cartry, M. -C. Peignon, and C. Cardinaud, J. Phys. D JPAPBE 0022-3727 39, 1830 (2006). 10.1088/0022-3727/39/9/019
21. C. Cardinaud, CIP Proceedings, Le Vide, 1999 (unpublished), Vol. 291, p. 124.
22. J. H. Keller, J. C. Forster, and M. S. Barnes, J. Vac. Sci. Technol. A JVTAD6 0734-2101 11, 2487 (1993). 10.1116/1.578597
23. D. Eon, V. Raballand, G. Cartry, and C. Cardinaud, J. Phys. D JPAPBE 0022-3727 40, 3951 (2007). 10.1088/0022-3727/40/13/007
24. J. -S. Jenq, J. Ding, J. W. Taylor, and N. Hershkowitz, Plasma Sources Sci. Technol. PSTEEU 0963-0252 3, 154 (1994). 10.1088/0963-0252/3/2/005
25. NIST data base: http://physics.nist.gov/PhysRefData/ASD/index.html.
26. A. Yanguas-Gil, J. Cotrino, and L. L. Alves, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 38, 1588 (2005). 10.1088/0022-3727/38/10/014
27. J. T. Gudmundsson, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 35, 328 (2002). 10.1088/0022-3727/35/4/308
28. L. Lallement, A. Rhallabi, C. Cardinaud, M. -C. Peignon-Fernandez, and L. L. Alves, Plasma Sources Sci. Technol. PSTEEU 0963-0252 18, 025001 (2009). 10.1088/0963-0252/18/2/025001
29. D. R. Lick, Handbook of Chemistry and Physics, 71st ed. (CRC, Boca Raton, 1990).
30. T. M. Mayer and R. A. Barker, J. Vac. Sci. Technol. JVSTAL 0022-5355 21, 757 (1982). 10.1116/1.571821
31. R. A. Gottscho, C. W. Jurgensen, and D. J. Vitkavage, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10, 2133 (1992). 10.1116/1.586180
32. A. Rhallabi, L. Houlet, and G. Turban, J. Vac. Sci. Technol. A JVTAD6 0734-2101 18, 1366 (2000). 10.1116/1.582355
33. T. Lagarde, J. Pelletier, and Y. Arnal, J. Vac. Sci. Technol. B JVTBD9 1071-1023 17, 118 (1999). 10.1116/1.590525
34. D. C. Gray, I. Tepermeister, and H. H. Sawin, J. Vac. Sci. Technol. B JVTBD9 1071-1023 11, 1243 (1993). 10.1116/1.586925