Reactive ion etching of silica structures for integrated optics applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 6, 1996, Pages 2994-3003

  Bazylenko, M V ^a   Gross, M ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH RATE; POLYMER DEPOSITION RATE; PROFILE SLOPE; SIDEWALL ROUGHNESS;

ADDITION REACTIONS; AMORPHOUS SILICON; ARGON; CRYSTAL STRUCTURE; DEPOSITION; INTEGRATED OPTICS; PHOTORESISTS; SILICA; SURFACE ROUGHNESS; SURFACES; THERMAL EFFECTS; WAVEGUIDES;

REACTIVE ION ETCHING;

EID: 0030287405     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580258     Document Type: Article

References (25)

1. S. Suzuki, M. Yanagisawa, Y. Hibino, and K. Oda, J. Lightwave Technol. 12, 790 (1994).
2. B. H. Verbeek, C. H. Henry, N. A. Olsson, K. J. Orlowsky, R. F. Kazarinov, and B. H. Johnson, J. Lightwave Technol. 6, 1011 (1988).
3. M. V. Bazylenko, M. Gross, P. M. Allen, and P. L. Chu, IEEE Photonics Technol. Lett. 7, 774 (1995).
4. S. Valette, J. P. Jadot, P. Gidon, S. Renard, A. Fournier, A. M. Grouillet, H. Denis, P. Philippe, and E. Desgranges, Solid State Technol. 32, 69 (1989).
5. U. Hilleringmann and K. Goser, Microelectron. Eng. 19, 211 (1992).
6. R. A. H. Heinecke, Solid-State Electron. 18, 1146 (1975).
7. P. H. Singer, Semicond. Int. 9, 98 (1986).
8. C. Dominguez, J. Munoz, R. Gonzalez, and M. Tudanca, Sens. Actuators A 37, 38, 779 (1993).
9. H. Mori and N. Shimizu, IEEE J. Quantum Electron. 18, 776 (1982).
10. G. Dahm, I. W. Rangelow, P. Hudek, and H. W. P. Koops, Microelectron. Eng. 27, 266 (1995).
11. F. Peng, S. J. Pearton, J. R. Lothian, C. R. Abernathy, and W. S. Hobson, J. Vac. Sci. Technol. B 10, 2407 (1992).
12. J. J. Liang and J. M. Ballantyne, J. Vac. Sci. Technol. B 12, 2929 (1994).
13. E. S. Bulat, M. Tabasky, B. Tweed, C. Herrick, S. Hankin, N. J. Lewis, D. Oblas, and T. Fitzgerald, J. Vac. Sci. Technol. A 11, 1268 (1993).
14. K. E. Davies and C. M. Horwitz, J. Vac. Sci. Technol. A 7, 2705 (1989).
15. C. M. Horwitz, S. Boronkay, M. Gross, and K. E. Davies, J. Vac. Sci. Technol. A 6, 1837 (1988).
16. M. Gross and C. M. Horwitz, J. Vac. Sci. Technol. B 7, 534 (1989).
17. M. V. Bazylenko, M. Gross, A. Simonian, and P. L. Chu, J. Vac. Sci. Technol. A 14, 336 (1996).
18. G. S. Oehrlein and H. L. Williams, J. Appl. Phys. 62, 662 (1987).
19. G. S. Oehrlein, Y. Zhang, D. Vender, and O. Joubert, J. Vac. Sci. Technol. A 12, (1994).
20. G. S. Oehrlein, Y. Zhang, D. Vender, and M. Haverlag, J. Vac. Sci. Technol. A 12, 323 (1994).
21. G. C. Schwartz, L. B. Rothman, and T. J. Schopen, J. Electrochem. Soc. 126, 464 (1979).
22. E. L. Hu and R. E. Howard, Appl. Phys. Lett. 37, 1022 (1980).
23. L. A. Coldren and J. A. Rentschler, J. Vac. Sci. Technol. 19, 225 (1981).
24. Z. Xu, K. Gamo, and S. Namba, J. Vac. Sci. Technol. B 6, 1039 (1988).
25. A. J. Steckl and P. H. Yih, Appl. Phys. Lett. 60, 1966 (1992).