|
|
Volumn 20, Issue 4, 2002, Pages 1514-1521
|
|
Selective and deep plasma etching of SiO2: Comparison between different fluorocarbon gases (CF4, C2F6, CHF3) mixed with CH4 or H2 and influence of the residence time
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ADDITION REACTIONS;
COMPOSITION;
FLUOROCARBONS;
HYDROGEN;
INDUCTIVELY COUPLED PLASMA;
IONS;
METHANE;
MICROELECTROMECHANICAL DEVICES;
MIXTURES;
MOLECULES;
PLASMA ETCHING;
SCANNING ELECTRON MICROSCOPY;
DEEP PLASMA ETCHING;
HYDROFLUOROCARBON MIXTURE;
MICRO-OPTICAL ELECTROMECHANICAL SYSTEM;
OXIDE ETCH RATE;
SELECTIVE PLASMA ETCHING;
SILICA;
|
|
EID: 0035982581
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1495502 Document Type: Conference Paper |
|
Times cited : (55)
|
|
References (28)
|
