Simulation of mesa structures for III-V semiconductors under ion beam etching

EPJ Applied Physics

Volumn 6, Issue 3, 1999, Pages 273-280

  Houlet, L ^a   Rhallabi, A ^a   Turban, G ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ETCHING; ION BEAM LITHOGRAPHY; MASKS; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SPUTTERING; SUBSTRATES;

ION BEAM ETCHING;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0033137536     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1999184     Document Type: Article

References (20)

1. J.W. Lee, R.V. Crokett, S.J. Pearton, J. Vac. Sci. Technol. B 14, 1752 (1996).
2. F. Ren, J.R. Lothian, S.J. Pearton, C.R. Abernathy, P. Wisk, T.R. Fullowan, B. Tseng, S.N.G. Chu, Y.K. Chen, C. Yang, T. Fu, R. Brozovitch, H.H. Lin, C.L. Henning, T. Henry, J. Vac. Sci. Technol. B 12, 2916 (1994).
3. Y. Uenishi, Jpn J. Appl. Phys. 34, 2037 (1995).
4. B. Abraham-Shrauner, J. Vac. Sci. Technol. B 12, 2347 (1994).
5. E.S.G. Shaqfeh, C.W. Jurgendsen, J. Appl. Phys. 66, 4664 (1989).
6. V.K. Singh, E.S.G. Shaqfeh, J.P. McVittie, J. Vac. Sci. Technol. B 10, 1091 (1992).
7. W. Chen, B. Abraham-Shrauner, J. Appl. Phys. 81, (1997).
8. J.A. Levinson, E.S.G. Shaqfeh, M. Balooch, A.V. Hamza, J. Vac. Sci. Technol. A 15, 1902 (1997).
9. J.C. Arnold, H.H. Sawin, M. Dalvie, S. Hamaguchi, J. Vac. Sci. Technol. A 12, 620 (1994).
10. S. Hamaguchi, M. Dalvie, R.T. Farouki, S. Sethuraman, J. Appl. Phys. 74, 5172 (1993).
11. J.M.E. Harper, J.J. Cuomo, P.A. Leavy, G.M. Summe, H.R. Kaufman, F.J. Bresnock, J. Electrochem. Soc. 128, 1077 (1981).
12. J.C. Arnold, H.H. Sawin, J. Appl. Phys. 70, 5314 (1991).
13. D. Bollinger, R. Fink, Solid State Technol. 23, 97 (1980).
14. L. Houlet, A. Rhallabi, G. Turban, Proc. Mat. Res. Soc. Symp. 490, 225 (1998).
15. M. Dalvie, R.T. Farouki, S. Hamagushi, IEEE Trans. Electron. Dev. 39, 1090 (1992).
16. J. Pelka, M. Weiss, W. Hoppe, D. Mewes, J. Vac. Sc. Technol. B 7, 1483 (1989).
17. K. Ketata, S. Koumetz, M. Ketata, M. Debrie, Proc. Mat. Res. Soc. 324 (1994).
18. R.E. Lee, J. Vac. Sci. Technol. 16, 164 (1979).
19. S. Somekh, J. Vac. Sci. Technol. 13, 1003 (1976).
20. N. Bouadma, P. Devoldere, B. Jusserand, P. Ossart, Appl. Phys. Lett. 48, 1285 (1986).