Etching mechanisms of Si and SiO2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 2, 2005, Pages 226-233

  Gaboriau, F ^a,b   Fernandez Peignon, M C ^a   Cartry, G ^a   Cardinaud, Ch ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^b Laboratoire Plasma et Conversion d'Energie   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FLUOROCARBONS; INDUCTIVELY COUPLED PLASMA; OPTIMIZATION; SILICA; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

ION ENERGY; PLASMA CONDITIONS;

ETCHING;

EID: 31144446871     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1851541     Document Type: Article

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