Etching of Si O2 in C4 F8 /Ar plasmas. II. Simulation of surface roughening and local polymerization

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 2, 2010, Pages 259-270

  Guo, Wei ^a   Sawin, Herbert H ^b  

^a Massachusetts Institute of Technology   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AR PLASMAS; EXPERIMENTAL OBSERVATION; FLUX RATIO; GRAZING ANGLES; HIGH FLUX; ION INCIDENCE ANGLE; LOCAL CURVATURE; LOW FLUX; MICROMASKING; MONTE CARLO PROFILE SIMULATORS; PLANAR SURFACE; POLYMER DISTRIBUTION; POLYMER FORMATION; REACTIVE ION; SMOOTH SURFACE; SURFACE COMPOSITIONS; SURFACE KINETICS; SURFACE PASSIVATION; SURFACE-ROUGHENING; UNIFORM DISTRIBUTION;

ATOMIC FORCE MICROSCOPY; EXCITONS; ION BEAMS; IONS; MORPHOLOGY; PASSIVATION; PLASMA ETCHING; POLYMERIZATION; POLYMERS; SCANNING ELECTRON MICROSCOPY;

SURFACE MORPHOLOGY;

EID: 77949422515     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3290766     Document Type: Article

References (33)

1. G. P. Patsis, A. Tserepi, I. Raptis, N. Glezos, E. Gogolides, and E. S. Valamontes, J. Vac. Sci. Technol. B JVTBD9 1071-1023 18, 3292 (2000). 10.1116/1.1321281
2. T. Fukasawa, T. Hayashi, and Y. Horiike, Jpn. J. Appl. Phys. JAPNDE 0021-4922 42, 6691 (2003). 10.1143/JJAP.42.6691
3. R. J. Hoekstra, M. J. Grapperhaus, and M. J. Kushner, J. Vac. Sci. Technol. A JVTAD6 0734-2101 15, 1913 (1997). 10.1116/1.580659
4. C. Chu, T. Ahn, S. Jeong, and J. Kim, Patent ID: US6617253, issue date September 9, 2003.
5. D. J. Cooperberg, V. Vahedi, and R. A. Gottscho, J. Vac. Sci. Technol. A JVTAD6 0734-2101 20, 1536 (2002). 10.1116/1.1494818
6. A. P. Mahorowala and H. H. Sawin, J. Vac. Sci. Technol. B JVTBD9 1071-1023 20, 1055 (2002). 10.1116/1.1481866
7. A. P. Mahorowala and H. H. Sawin, J. Vac. Sci. Technol. B JVTBD9 1071-1023 20, 1064 (2002). 10.1116/1.1481867
8. A. P. Mahorowala and H. H. Sawin, J. Vac. Sci. Technol. B JVTBD9 1071-1023 20, 1077 (2002). 10.1116/1.1481868
9. A. P. Mahorowala and H. H. Sawin, J. Vac. Sci. Technol. B JVTBD9 1071-1023 20, 1084 (2002). 10.1116/1.1481869
10. J. Kim, Y. S. Chae, W. S. Lee, J. W. Shon, C. J. Kang, W. S. Han, and J. T. Moon, J. Vac. Sci. Technol. B JVTBD9 1071-1023 21, 790 (2003). 10.1116/1.1563626
11. M. J. Barela, H. M. Anderson, and G. S. Oehrlein, J. Vac. Sci. Technol. A JVTAD6 0734-2101 23, 408 (2005). 10.1116/1.1874173
12. T. E. F. M. Standaert, C. Hedlund, E. A. Joseph, G. S. Oehrlein, and T. J. Dalton, J. Vac. Sci. Technol. A JVTAD6 0734-2101 22, 53 (2004). 10.1116/1.1626642
13. Y. Yin and H. H. Sawin, J. Vac. Sci. Technol. A JVTAD6 0734-2101 26, 161 (2008). 10.1116/1.2821750
14. H. Kawai, Ph.D. thesis, MIT, 2008.
15. X. Li, L. Ling, X. Hua, M. Fukasawa, G. S. Oehrlein, M. Barela, and H. M. Anderson, J. Vac. Sci. Technol. A JVTAD6 0734-2101 21, 284 (2003). 10.1116/1.1531140
16. W. Guo and H. H. Sawin, J. Vac. Sci. Technol. A JVTAD6 0734-2101 28, 250 (2010).
17. R. M. Bradley and J. M. E. Harper, J. Vac. Sci. Technol. A JVTAD6 0734-2101 6, 2390 (1988). 10.1116/1.575561
18. P. Sigmund, Phys. Rev. PHRVAO 0031-899X 187, 768 (1969). 10.1103/PhysRev.187.768
19. A. Miotello and R. Kelly, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 122, 458 (1997). 10.1016/S0168-583X(96)00665-9
20. Y. Yin, S. Rasgon, and H. H. Sawin, J. Vac. Sci. Technol. B JVTBD9 1071-1023 24, 2360 (2006). 10.1116/1.2338044
21. D. L. Goldfarb, J. Vac. Sci. Technol. B JVTBD9 1071-1023 22, 647 (2004). 10.1116/1.1667513
22. B. Ziberi, F. Frost, and B. Rauschenbach, Phys. Rev. B PRBMDO 0163-1829 72, 235310 (2005). 10.1103/PhysRevB.72.235310
23. B. Ziberi, F. Frost, and B. Rauschenbach, J. Vac. Sci. Technol. A JVTAD6 0734-2101 24, 1344 (2006). 10.1116/1.2188415
24. A.-D. Brown and J. Erlebacher, Phys. Rev. Lett. PRLTAO 0031-9007 95, 056101 (2005). 10.1103/PhysRevLett.95.056101
25. N. R. Rueger, J. Vac. Sci. Technol. A JVTAD6 0734-2101 15, 1881 (1997). 10.1116/1.580655
26. S. Xu, J. Vac. Sci. Technol. A JVTAD6 0734-2101 19, 871 (2001). 10.1116/1.1367262
27. E. Gogolides, J. Appl. Phys. JAPIAU 0021-8979 88, 5570 (2000). 10.1063/1.1311808
28. J. Feldsien, D. Kim, and D. J. Economou, Thin Solid Films THSFAP 0040-6090 374, 311 (2000). 10.1016/S0040-6090(00)01156-1
29. S. M. Kong H. J. Choi, B. T. Lee, S. Y. Han, and J. L. Lee, J. Electron. Mater. JECMA5 0361-5235 31, 209 (2002). 10.1007/s11664-002-0208-2
30. G. Franz, Mater. Sci. Semicond. Process. MSSPFQ 1369-8001 5, 525 (2002). 10.1016/S1369-8001(02)00115-4
31. S. Turner, L. Kam, M. Isaacson, H. G. Craighead, W. Shain, and J. Turner, J. Vac. Sci. Technol. B JVTBD9 0734-211X 15, 2848 (1997). 10.1116/1.589742
32. N. Negishi, H. Takesue, M. Sumiya, Y. Yoshida, Y. Momonoi, M. Izawa, J. Vac. Sci. Technol. B JVTBD9 1071-1023 23, 217 (2005). 10.1116/1.1849218
33. Y. Yin and H. H. Sawin, J. Vac. Sci. Technol. A JVTAD6 0734-2101 25, 802 (2007). 10.1116/1.2748797