Global model and diagnostic of a low-pressure SF6/Ar inductively coupled plasma

Plasma Sources Science and Technology

Volumn 18, Issue 2, 2009, Pages

  Lallement, L ^a   Rhallabi, A ^a   Cardinaud, C ^a   Peignon Fernandez, M C ^a   Alves, L L ^b  

^a UNIVERSITÉ DE NANTES   (France)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FLUORINE; CHARGE NEUTRALITY; DISCHARGE POWER; ELECTRON DENSITIES; GLOBAL MODELS; MASS BALANCE EQUATIONS; NEUTRAL SPECIES; OPERATING CONDITION; RADIO FREQUENCIES; RF POWER; SIMULATION RESULT;

ARGON; ATOMIC SPECTROSCOPY; ATOMS; ELECTRIC DISCHARGES; ELECTRON TEMPERATURE; ELECTRONS; EMISSION SPECTROSCOPY; FLUORINE; INDUCTIVELY COUPLED PLASMA; MIXTURES; MOLECULAR SPECTROSCOPY; OPTICAL EMISSION SPECTROSCOPY; ORGANIC POLYMERS; PHOTORESISTS; PHYSICAL VAPOR DEPOSITION; PRASEODYMIUM COMPOUNDS;

SIMULATORS;

EID: 67649852215     PISSN: 09630252     EISSN: 13616595     Source Type: Journal    
DOI: 10.1088/0963-0252/18/2/025001     Document Type: Article

References (53)

1. Pargon E, Darnon M, Joubert O, Chevolleau T, Vallier L, Mollard L and Lill T 2005 J. Vac. Sci. Technol. B 23 1913
2. Foucher J, Cunge G, Vallier L and Joubert O 2002 J. Vac. Sci. Technol. B 20 2024
3. Welch C, Goodyear L, Wahlbrink T, Lemme M and Mollenhauer T 2006 Microelectron. Eng. 83 1170
4. Aachboun S, Ranson P, Hilbert C and Boufnichel M 2000 J. Vac. Sci. Technol. A 18 1848
5. Guilet S, Bouchoule S, Jany C, Corr C and Chabert P 2006 J. Vac. Sci. Technol. B 24 2381
6. Bhardwaj J and Ashraf H 1995 Proc. SPIE 2639 224
7. Aachboun S and Ranson P 1999 J. Vac. Sci. Technol. A 17 2270
8. Pruessner M, Rabinovich W, Stievater T, Park D and Baldwin J 2007 J. Vac. Sci. Technol. B 25 21
9. Gaboriau F, Cartry G, Peignon M and Cardinaud C 2002 J. Vac. Sci. Technol. B 20 1514
10. Hosomi K, Kikawa T, Goto S, Yamada H, Katsuyama T and Arakawa Y 2006 J. Vac. Sci. Technol. B 24 1226
11. Leech P 1999 Vacuum 55 191
12. Metwalli E and Pantano C 2003 Nucl. Instrum. Methods Phys. Res. B 207 21
13. Coburn J 1979 J. Appl. Phys. 50 5210
14. Li L, Abe T and Esashi M 2003 J. Vac. Sci. Technol. B 21 2545
15. Dussart R, Boufnichel M, Marcos G, Lefaucheux P, Basillais A, Benoit R, Tillocher T, Mellhaoui X, Estrade-Szwarckopf H and Ranson P 2004 J. Micromech. Microeng. 14 190
16. Park J, Lee N, Lee J, Park J and Park H 2005 Microelectron. Eng. 82 119
17. Kline L E 1986 IEEE Trans. Plasma Sci. 14 145
18. Anderson H M, Merson J A and Light R W 1986 IEEE Trans. Plasma Sci. 14 156
19. Riccardi C, Barni R, de Colle F and Fontanesi M 2000 IEEE Trans. Plasma Sci. 28 278
20. Rauf S, Ventzek P L G, Abraham I C, Hebner G A and Woodworth J R 2002 J. Appl. Phys. 92 6998
21. Lieberman M and Gottscho R 1994 Physics of Thin Films vol 18 ed M Francombe and J Vossen (New York: Academic)
22. Lee C and Lieberman M 1995 J. Vac. Sci. Technol. A 13 368
23. Lichtenberg A J, Vahedi V, Lieberman M A and Rognlien T 1994 J. Appl. Phys. 75 2339
24. Lichtenberg A J, Kouznetov I G, Lee Y T, Liebermann M A, Kaganovish I D and Tsendin L D 1997 Plasma Sources Sci. Technol. 6 437
25. Tuszewski M and White R 2003 J. Appl. Phys. 94 2858
26. Godiak A, Piejak R and Alexandrovich B 1995 Plasma Sources Sci. Technol. 4 332
27. Hopkins M 1995 J. Res. Natl Inst. Stand. Technol. 100 415
28. Gaboriau F, Peignon M-C, Cartry G, Rolland L, Eon D, Cardinaud C and Turban G 2002 J. Vac. Sci. Technol. A 20 919
29. Paranjpe A, Mc Vittie J and Self S 1990 J. Appl. Phys. 67 6718
30. Godyak A and Piejak R 1990 Phys. Rev. Lett. 65 996
31. Druyvesteyn M J 1930 Z. Phys. 64 781
32. Lieberman M A and Lichtenberg A J 1994 Principles of Plasma Discharges and Materials Processing (New York: Wiley)
33. Godiak A, Piejak R and Alexandrovich B 1992 Plasma Sources Sci. Technol. 1 36
34. Singh H and Graves D B 2000 J. Appl. Phys. 88 3889
35. Braithwaite N St. J, Booth J P and Cunge G 1996 Plasma Sources Sci. Technol. 5 677-84
36. Jenq J-S, Ding J, Taylor J W and Hershkowitz N 1994 Plasma Sources Sci. Technol. 3 154
37. Coburn J and Chen M 1980 J. Appl. Phys. 51 3134
38. NIST data base: http://physics.nist.gov/PhysRefData/ASD/index.html
39. Yanguas-Gil A, Cotrino J and Alves L L 2005 J. Phys. D: Appl. Phys. 38 1588
40. Gudmundsson J T 2002 J. Phys. D: Appl. Phys. 35 328
41. Rhallabi A and Catherine Y 1991 IEEE Trans. Plasma Sci. 19 270
42. Blanks K A, Tabor A E and Becker K 1987 J. Chem. Phys. 86 4871
43. Bird R B, Steward W E and Lightfoot E N 1960 Transport Phenomena (New York: Wiley) p 511
44. Christophorous L G and Olthoff J K 2000 J. Phys. Chem. Ref. Data 29 267
45. Ito M, Goto M, Toyoda H and Sugai H 1995 Contrib. Plasma Phys. 35 405
46. Tarnovsky V, Deutsch H, Martus K E and Becker K 1998 J. Chem. Phys. 109 6596
47. Freund R S, Wetzel R C, Shul R J and Hayes T R 1990 Phys. Rev. A 41 3575
48. Ryan K R and Plumb I C 1990 Plasma Chem. Plasma Process. 10 207
49. Kota G P, Coburn J W and Graves D B 1999 J. Vac. Sci. Technol. A 85 74
50. Gudmundsson J T, Kimura T and Lieberman M A 1999 Plasma Sources Sci. Technol. 8 22
51. Chabert P, Lichtenberg A, Lieberman M and Marakhtanov A 2001 Plasma Sources Sci. Technol. 10 478
52. Chabert P, Sheridan T E, Boswell R W and Perrin 1999 Plasma Sources Sci. Technol. 8 561
53. Kushner M J, Anderson H M and Hargis P J 1985 Proc. Plasma Synthesis and Etching of Electronic Materials Symp. (Boston, USA) p201