The effect of VUV radiation from Ar/O2 plasmas on low-k SiOCH films

Journal of Physics D: Applied Physics

Volumn 44, Issue 32, 2011, Pages

  Lee, J ^a   Graves, D B ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AR PLASMAS; DIELECTRIC DAMAGE; DYNAMIC BEHAVIOURS; DYNAMIC CHANGES; EXPERIMENTAL DATA; EXPOSURE TIME; FITTING PARAMETERS; FTIR; FTIR ANALYSIS; LOW-K MATERIALS; MERCURY PROBE; MODEL PREDICTION; OXYGEN RADICAL; PHOTO-INDUCED; PLASMA EXPOSURE; PLASMA TREATMENT; PLASMA-INDUCED DAMAGE; POROUS LOW-K MATERIAL; SIOC-H FILM; VACUUM ULTRAVIOLETS; VUV PHOTON; VUV RADIATION; XE LAMP;

ABSORPTION; ABSORPTION SPECTROSCOPY; CHEMICAL ANALYSIS; CHEMICAL MODIFICATION; DEGRADATION; MATERIALS; MERCURY (METAL); MULTIPHOTON PROCESSES; PHOTONS; PLASMA APPLICATIONS; SILICON COMPOUNDS; VACUUM; VACUUM APPLICATIONS; XENON;

PLASMAS;

EID: 80051478168     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/32/325203     Document Type: Article

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