Investigation of physical and chemical property changes of ultra low-κ SiOCH in aspect of cleaning and chemical repair processes

Microelectronic Engineering

Volumn 87, Issue 3, 2010, Pages 457-461

  Oszinda, Thomas ^a   Schaller, Matthias ^b   Fischer, Daniel ^b   Walsh, Christine ^c   Schulz, Stefan E ^d  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b IBM MICROELECTRONICS   (United States)

^c SOPRA   (France)

^d CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Surface free energy; Ultra low k dielectric; Wetting behavior

Indexed keywords

CARBON CONTENT; CARBON DEPLETION; CHEMICAL VAPOR DEPOSITED; DIFFERENT SOLVENTS; ELLIPSOMETRIC POROSIMETRY; PHYSICAL AND CHEMICAL PROPERTIES; PLASMA EXPOSURE TIME; PLASMA GAS; PLASMA TREATMENT; PROCESS CONDITION; REACTIVE ION ETCH; REDUCING GAS; REPAIR PROCESS; STRIP PROCESS; STRUCTURAL CHANGE; SURFACE FREE ENERGY; ULK LAYERS; ULTRA LOW-K DIELECTRICS; WETTING BEHAVIOR;

ANGLE MEASUREMENT; AUGER ELECTRON SPECTROSCOPY; CHEMICAL CLEANING; CHEMICAL PROPERTIES; CONTACT ANGLE; DIELECTRIC FILMS; FREE ENERGY; PHOTORESISTORS; PORE SIZE; REPAIR; WETTING;

SURFACE CHEMISTRY;

EID: 74449087973     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.06.028     Document Type: Article

References (24)

1. Maex K., Baklanov M.R., Shamiryan D., Iacopi F., Brongersma S.H., and Yanovitskaya Z.S. Appl. Phys. Rev. 93 (2003) 8793
2. International Technology Roadmap for Semiconductors, SEMATECH.
3. Shi H., Bao J., Smith R.S., Huang H., Liu J., Ho P.S., McSwiney M.L., Moinpour M., and Kloster G.M. Appl. Phys. Lett. 93 (2008) 192909
4. Kurihara K., Ono T., Kohmura K., Tanaka H., Fujii N., Hata N., and Kikkawa T. Appl. Phys. Lett. 101 (2007) 113301
5. Hoyas A.M., Schuhmacher J., Wehlan C.M., Baklanov M.R., Carbonell L., Celis J.P., and Maex K. J. Vac. Sci. Technol. B 23 (2005) 1551
6. Yonekura K., Sakamori S., Goto K., Matsuura M., Fujiwara N., and Yoneda M. J. Vac. Sci. Technol. B 22 (2004) 548
7. Abell T., and Maex K. Microelectron. Eng. 2004 (2004) 76
8. Broussous L., Puyrenier W., Rebiscoul D., Rouessac V., and Ayral A. Microelectron. Eng. 84 (2007) 2600
9. S.V. Nitta, S. Purushothaman, N. Chakrapani, O.Rodriguez, N. Klymko, E. Todd Ryan, G. Bonilla, S. Cohen, S. Molis, K. McCullough, in: Proc. of Advanced Metallization Conference, 2005, p. 325.
10. Lahlouh B., Lubguban J.A., Sivaraman G., Gale R., and Gangopadhyay S. Electrochem. Solid-State Lett. 7 (2004) G338
11. Xie B., and Muscat A.J. Microelectron. Eng. 76 (2004) 52
12. Chang T.C., Mor Y.S., Liu P.T., Tsai T.M., Chen C.W., Chu C.J., Pan F.M., Lur W., and Sze S.M. J. Electrochem. Soc. 149 (2002) F145
13. Rajagopalan T., Lahlouh B., Lubguban J.A., Biswas N., Gangopadhyay S., Sun J., Huang D.H., Simon S.L., Toma D., and Butler R. Surf. Sci. 252 (2006) 6323
14. Goldfarb D.L., de Pablo J.J., Nealey P.F., Simons J.P., Moreau W.M., and Angelopoulos M. J. Vac. Sci. Technol. B 18 (2000) 3313
15. Ernur D., Iacopi F., Carbonell L., Struyf H., and Maex K. Microelectron. Eng. 70 (2003) 285
16. E. Vinogradova, E. Osei-Yiadom, C.E. Smith, D.W. Mueller, R.F. Reidy, Microelectron. Eng. 86 (180) 176.
17. Myers D. Surfaces. second ed. Interfaces and Colloids: Principles and Applications (1999), Wiley-VCH
18. Baklanov M.R., Mogilnikov K.P., Polovinkin V.G., and Dultsev F.N. J. Vac. Sci. Technol. B 18 (2000) 1385
19. Oszinda T., Beyer V., Schaller M., Fischer D., Bartsch C., and Schulze S.E. J. Vac. Sci. Technol. B 27 (2009) 521
20. Wenzel R.N. Ind. Eng. Chem. 28 (1936) 988
21. Cassie A.B.D., and Baxter S. Trans. Faraday Soc. 40 (1944) 546
22. Owens D.K., and Wendt R.C. J. Appl. Polym. Sci. 13 (1969) 1741
23. Wu S. Polymer Interfaces and Adhesion (1982), Marcel Dekker, New York
24. N. Ahner, M. Schaller, Solid State Phenomena, vol. 145-146, in press.