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Journal of Applied Physics

Volumn 108, Issue 9, 2010, Pages

Plasma damage effects on low- k porous organosilicate glass

(4) Ren, H a Antonelli, G A b Nishi, Y c Shohet, J L a

a University of Wisconsin Madison (United States)

b Novellus Systems (United States)

c STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CHARGE ACCUMULATION; DIELECTRIC CONSTANTS; DIELECTRIC THICKNESS; ECR PLASMA; ELECTRON CYCLOTRON RESONANCE PLASMA; ELLIPSOMETRIC MEASUREMENTS; FLUX MEASUREMENTS; PARTICLE BOMBARDMENT; PHOTON FLUX; PLASMA DAMAGE; PLASMA EXPOSURE; PLASMA-INDUCED; POROUS ORGANOSILICATE; SHRINKING EFFECTS; UV EXPOSURE; VACUUM ULTRAVIOLET RADIATION; VACUUM ULTRAVIOLETS; WAFER CHUCK;

ARGON; CHARGED PARTICLES; CYCLOTRONS; DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTRIC FIELD EFFECTS; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORMS; GLASS; PLASMAS; RADIATION EFFECTS; SHRINKAGE; SILICON WAFERS; ULTRAVIOLET RADIATION; VACUUM;

ELECTROMAGNETIC INDUCTION;

EID: 78649249822 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3506523 Document Type: Article

Times cited : (32)

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