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Volumn 108, Issue 7, 2010, Pages

The mechanism of low-k SiOCH film modification by oxygen atoms

(10) Braginsky, O V a Kovalev, A S a Lopaev, D V a Malykhin, E M a Mankelevich, Yu A a Rakhimova, T V a Rakhimov, A T a Vasilieva, A N a Zyryanov, S M a Baklanov, M R b

a MOSCOW STATE UNIVERSITY (Russian Federation)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM INTERACTION; ATOMIC FORCE; EFFECT OF IONS; EXPERIMENTAL SYSTEM; LOW-K FILMS; LOW-K MATERIALS; LOWER PROBABILITIES; METHYL GROUP; MONTE CARLO MODEL; OXYGEN ATOM; PENETRATION DEPTH; PORE WALL SURFACES; SIOC-H FILM; SURFACE RECOMBINATIONS; VACUUM ULTRAVIOLETS; X RAY FLUORESCENCE;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; FUNCTIONAL GROUPS; INFRARED SPECTROSCOPY; OXYGEN; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE REACTIONS; SURFACES;

ATOMS;

EID: 77958164663 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3486084 Document Type: Article

Times cited : (58)

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