The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application

Materials Chemistry and Physics

Volumn 110, Issue 2-3, 2008, Pages 299-302

  Huang, C H ^a   Wang, N F ^b   Tsai, Y Z ^b   Liu, C C ^c   Hung, C I ^a   Houng, M P ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Chemical vapor deposition (CVD); Fourier transform infrared spectroscopy (FTIR); Thin films; X ray photoelectron spectroscopy (XPS)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES; FLOW RATE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXYGEN; PLASMA WAVES; SURFACE TREATMENT; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON COMPOSITION; FLOW RATE RATIO; OXYGEN PLASMA TREATMENT;

SILICON COMPOUNDS;

EID: 42949170469     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.02.023     Document Type: Article

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