Plasma damage mechanisms for low- k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Uchida, Saburo ^a   Takashima, Seigo ^a   Hori, Masaru ^a   Fukasawa, Masanaga ^b   Ohshima, Keiji ^b   Nagahata, Kazunori ^b   Tatsumi, Tetsuya ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INSULATING MATERIALS; PERMITTIVITY; PLASMA ETCHING; POROUS MATERIALS; SILICON COMPOUNDS;

DIELECTRIC CONSTANT (LOW- K) FILMS; PLASMA DAMAGE; ULTRA-LARGE-SCALE INTEGRATED CIRCUITS;

THIN FILMS;

EID: 42149146117     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2891787     Document Type: Article

References (13)

1. B. Cruden, K. Chu, K. Gleason, and H. Sawin, J. Electrochem. Soc. 146, 4590 (1999).
2. J. C. Alonso, E. Pichardo, L. Rodriguez-Fernandez, J. C. Cheang-Wong, and A. Ortiz, J. Vac. Sci. Technol. A 19, 508 (2001).
3. A. Kohl, R. Mimna, R. Shick, L. Rhodes, Z. L. Wang, and P. Kohl, Electrochem. Solid-State Lett. 2, 77 (1999).
4. Y. H. Kim, S. K. Lee, and H. J. Kim, J. Vac. Sci. Technol. A 18, 1216 (2000).
5. Y. Xu, Y. Tsai, K. N. Tu, B. Zhao, Q.-Z. Liu, M. Brongo, G. T. T. Sheng, and C. H. Tung, Appl. Phys. Lett. 75, 853 (1999).
6. B. P. Gorman, R. A. Orzco-Teran, J. A. Roepsch, H. Dong, and D. W. Mueller, Appl. Phys. Lett. 79, 4010 (2001).
7. T. E. F. M. Standaert, E. A. Joseph, G. S. Oehrlein, A. Jain, W. N. Gill, P. C. Wayner, Jr., and J. L. Plawsky, J. Vac. Sci. Technol. A 18, 2742 (2000).
8. T. C. Chang, P. T. Liu, Y. J. Mei, Y. S. Mor, T. H. Perng, Y. L. Yang, and S. M. Sze, J. Vac. Sci. Technol. B 17, 2325 (1999).
9. P. T. Lui, T. C. Chang, Y. S. Mor, and S. M. Sze, Jpn. J. Appl. Phys., Part 1 38, 3482 (1999).
10. S. A. Vitale and H. H. Swain, J. Vac. Sci. Technol. A 20, 651 (2002).
11. K. Yonekura, S. Sakamori, K. Goto, M. Matsuura, N. Fujiwara, and M. Yoneda, J. Vac. Sci. Technol. B 22, 548 (2004).
12. K. Yonekura, K. Goto, M. Matsuura, N. Fujiwara, and K. Tsujimoto, Jpn. J. Appl. Phys., Part 1 44, 2976 (2005).
13. M. A. Worsley, S. F. Bent, N. C. M. Fuller, T. L. Tai, J. Doyle, M. Rothwell, and T. Dalton, J. Appl. Phys. 101, 013305 (2007).